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Confinement of Screw Dislocations to Predetermined Lateral Positions in (0001) 4H-SiC Epilayers Using Homoepitaxial Web Growth

Published online by Cambridge University Press:  11 February 2011

Philip G. Neudeck ,
David J. Spry ,
Andrew J. Trunek ,
J. Anthony  and
Glenn M. Beheim
Philip G. Neudeck
Affiliation:
NASA Glenn Research Center, 21000 Brookpark Road M.S. 77–1, Cleveland, OH 44135, U.S.A.
David J. Spry
Affiliation:
NASA Glenn Research Center, 21000 Brookpark Road M.S. 77–1, Cleveland, OH 44135, U.S.A.
Andrew J. Trunek
Affiliation:
NASA Glenn Research Center, 21000 Brookpark Road M.S. 77–1, Cleveland, OH 44135, U.S.A.
Glenn M. Beheim
Affiliation:
NASA Glenn Research Center, 21000 Brookpark Road M.S. 77–1, Cleveland, OH 44135, U.S.A.
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Abstract

This paper reports initial demonstration of a cantilevered homoepitaxial growth process that places screw dislocations at predetermined lateral positions in on-axis 4H-SiC mesa epilayers. Thin cantilevers were grown extending toward the interior of hollow pre-growth mesa shapes etched into an on-axis 4H-SiC wafer, eventually completely coalescing to form roofed cavities. Each completely coalesced cavity exhibited either: 1) a screw dislocation growth spiral located exactly where final cantilever coalescence occurred, or 2) no growth spiral. The fact that growth spirals are not observed at any other position except the central coalescence point suggests that substrate screw dislocations, initially surrounded by the hollow portion of the pre-growth mesa shape, are relocated to the final coalescence point of the webbed epilayer roof. Molten potassium hydroxide etch studies revealed that properly grown webbed cantilevers exhibited no etch pits, confirming the superior crystal quality of the cantilevers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K5.2
Copyright
Copyright © Materials Research Society 2003

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References

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