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Conduction and Injection in Off-Stoichiometry Oxides

Published online by Cambridge University Press:  22 February 2011

K.-T. Chang ,
C. Lam  and
K. Rose
K.-T. Chang
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute Troy, New York 12181
C. Lam
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute Troy, New York 12181
K. Rose
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute Troy, New York 12181
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Abstract

Slightly silicon rich oxides or off-stoichiometry oxides (OSO) have been prepared by LPCVD. When R, the nitrous oxide/silane ratio, equals or exceeds 30 these films have the refractive index and CV characteristics of stoichiometric CVD oxide. Injection into these oxides by oxides richer in silicon has been compared with injection into thermal oxides. We find that silicon rich oxides with higher silicon content having the same Research-article values provide the same enhancement of electron injection into thermal oxides and off-stoichiometry oxides. Conduction in off-stoichiometry oxides depends on preparation, but can be accounted for by tunneling between islands.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 107
Copyright
Copyright © Materials Research Society 1988

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References

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