Preliminary conductance measurements of Si implanted, α-Quartz which had been annealed in ar to 1000• C have been made using a bridge method. the quartz was implanted to a dose expected to yield Si precipitates inside the quartz upon annealing. the measured conductivity, based on a geometry deduced from TRIM calculations and several trans-conductance measurements, is ~ 2 х 10-4(Ω m)-1. This is consistent with large islands of Si in series with an insulating matrix.