Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T15:33:38.100Z Has data issue: false hasContentIssue false
  • English
  • Français

Condensed Chlorine Etching of GaAs Induced by Excimer Laser Radiation

Published online by Cambridge University Press:  25 February 2011

M.B. Freiler ,
Ming Chang Shih ,
G. Haase ,
R. Scarmozzino  and
R.M. Osgood Jr
M.B. Freiler
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY
Ming Chang Shih
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY
G. Haase
Affiliation:
Currently at University of Wisconsin, Madison
R. Scarmozzino
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY
R.M. Osgood Jr
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY
Get access

Abstract

We report excimer laser induced etching of GaAs samples covered with a layer of condensed Cl2. The experiments were performed at low temperatures (120-150 K) and in a chlorine ambient (PC12=1-40 mTorr). Spatially well-resolved, anisotropic etching has been demonstrated with an observed etch rate of 0.25 Å/pulse (0.1 μm/min for typical parameters). The etch rate is characterized as a function of the various system parameters (pressure, temperature, laser rep-rate, etc.), and a model is proposed to describe the etching mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 15
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Tachi, Shinichi, Tsujimoto, Kazunori, and Okuddaira, Sadayuki, App. Phys. Lett. 5, 616 (1988).Google Scholar
2. Tachi, Shinich, Tsujimoto, Kazunori, and Okudaira, Sadayuki, in Dry Processing Symposium, pp. 42–49 (1988).Google Scholar
3. Tsujimoto, K., Tachi, S., Ninomiya, K., Suzuki, K., Okudaira, S., and Nishimatsu, S., in Extended Abstracts of 18th Conference on Solid State Devices and Materials (The Japan Society of Applied Physics, Tokyo, 1986) pp. 228–232.Google Scholar
4. Liberman, V., Haase, G., and Osgood, R. M. Jr, Submitted to J. Chem. Phys. (1991).Google Scholar
5. Cousins, Lisa M. and Loene, Stephen R., Chem. Phys. Lett., 155, 162 (1989).Google Scholar
6. Brunauer, Emmett, and , Tayler, J. Amer. Chem. Soc., 60, 309 (1938).Google Scholar