Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T18:26:03.013Z Has data issue: false hasContentIssue false
  • English
  • Français

Concentration-Independent Solute Segregation in Laser Annealing of Semiconductor Crystals

Published online by Cambridge University Press:  22 February 2011

Jun-ichi Chikawa ,
Fumio Sato  and
Tadasu Sunada
Jun-ichi Chikawa
Affiliation:
NHK Broadcasting Science Research Laboratories, 1–10–11, Kinuta, Setagaya-ku, Tokyo, 157, Japan
Fumio Sato
Affiliation:
NHK Broadcasting Science Research Laboratories, 1–10–11, Kinuta, Setagaya-ku, Tokyo, 157, Japan
Tadasu Sunada
Affiliation:
NHK Broadcasting Science Research Laboratories, 1–10–11, Kinuta, Setagaya-ku, Tokyo, 157, Japan
Get access

Abstract

Atomic processes at the interface in regrowth following laser induced melting were investigated by observing behavior of impurity segregation. The interfacial segregation coefficient k* was obtained from depth profiles of solute atoms redistributed by laser irradiation of uniformly doped Si, Ge, and GayAl1−yAs crystals. It was found that k*=k0 for B in Si, Ga in Ge ih the growth rate range of 1 m/s. It is concluded that rapid growth freezes a state of liquid monolayer adjacent to the interface which has the character of ideal solution from dilute to eutectic composition for dopant-silicon systems and in the entire range of composition for the mixed crystal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 193
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Campisano, S.U., Appl. Phys. A30, 195 (1983).Google Scholar
2Chikawa, J. and Sato, F., Jpn. J. Appl. Phys. 19, L577 (1980).Google Scholar
3Chikawa, J., Sato, F. and Sunada, T., Materials Letters, to be published.Google Scholar
4Smith, V.G., Tiller, W.A. and Rutter, J.W., Can. J. Phys. 33, 723 (1955).Google Scholar
5Huff, H.R., Digges, T.G. Jr. and Cecil, O.B., J. Appl. Phys. 42, 1235 (1971).Google Scholar
6Baeri, P., Foti, G., Poate, J.M., Compisano, S.U. and Cullis, A.G., Appl. Phys. Lett. 38, 800 (1981).Google Scholar
7Panish, M.B. and Ilegems, M., Progress in Solid State Chemistry Vol. 7 (Oxford University Press, 1972) p. 39.Google Scholar
8Giessen, B. and Vogel, R., Z. Metallkd. 50, 274 (1959).Google Scholar
9Thurmond, C.D. and Kowalchik, M., Bell System Tech. J. 39, 169 (1960).Google Scholar
10Natsuaki, N., Tamura, M., and Tokuyama, T., J. Appl. Phys. 51, 3373 (1980).Google Scholar
11White, C.W., Appleton, B.R., Stritzker, B., Zehner, D.M. and Wilson, S.R., Laser and Electron-Beam Solid Interactions and Materials Processing, edited by Gibbons, J.F., Hess, L.D. and Sigmon, T.W. (North Holland, New York, 1981) p. 59.Google Scholar
12Trumbore, F.A., Bell System Tech. J. 39, 205 (1960).Google Scholar
13Cahn, J.W., Coriell, S.R., and Boettinger, W.J., Laser and Electron Beam Processing of Materials, edited by White, C.W. and Peercy, P.S. (Academic Press, New York, 1980), p. 89.Google Scholar
14Narayan, J., J. Appl. Phys. 52, 1289 (1981).Google Scholar