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Computer Simulation Study of the Effect of Defects on Switching in Ferroelectric Thin Films

Published online by Cambridge University Press:  16 February 2011

Robert D. Pugh ,
Michael J. Sabochick  and
Theodore E. Luke
Robert D. Pugh
Affiliation:
Air Force Institute of Technology, Department of Engineering Physics Wright-Patterson Air Force Base, OH 45433–6583
Michael J. Sabochick
Affiliation:
Air Force Institute of Technology, Department of Engineering Physics Wright-Patterson Air Force Base, OH 45433–6583
Theodore E. Luke
Affiliation:
Air Force Institute of Technology, Department of Engineering Physics Wright-Patterson Air Force Base, OH 45433–6583
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Abstract

A new computational method for simulating the dynamics of switching in ferroelectric materials is presented. The new method is shown to be more realistic for dynamic simulations and computationally more efficient than the traditional Monte Carlo method. The method is used to investigate the effect of polar defects on switching behavior. The results are in qualitative agreement with experimental observations of fatigue.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990 , 325
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Binder, K. (ed.), Monte Carlo Method in Statistical Physics, Spinger-Verlag, New York (1984).Google Scholar
2. Metropolis, M., Rosenbluth, A. W., Rosenbluth, M. N., Teller, A. N. and Teller, E., J. Chem. Phys. 21, 1087 (1953).Google Scholar
3. Dukier, H. M. and Beale, P. D., Phys. Rev. B 41, 490 (1990).Google Scholar
4. Scott, J. F., Pouligny, B., Dimmler, K., Parris, M., Butler, D. and Eaton, S., J. Appl. Phys. 62, 4510 (1987).Google Scholar
5. Scott, J. F. and Pouligny, B., J. Appl. Phys. 64, 1547 (1988).Google Scholar
6. Lambeck, P. V. and Jonker, G. H., J. Phys. Chem. Solids, 47, 453 (1986).Google Scholar
7. Lines, M. E. and Glass, A. M., Principles and Applications of Ferroelectrics and Related Materials, Clarendon Press, Oxford (1977).Google Scholar
8. Mason, W. P., Phys. Rev. 72, 854 (1947).Google Scholar
9. Bullington, J. A., Ivey, M. D. and Evans, J. T., in the Proc. of the Colorado Microelectronics Conference, Colorado Springs, CO, 28–30 March, 1989, pg. 201.Google Scholar