Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-29T07:39:13.599Z Has data issue: false hasContentIssue false
  • English
  • Français

Computer Simulation Study of Film Formation Process

Published online by Cambridge University Press:  25 February 2011

Yasushi Sasajima ,
Syubo Taya ,
Satoru Ozawa  and
Ryoichi Yamamoto
Yasushi Sasajima
Affiliation:
Ibaraki University, Faculty of Engineering, Hitachi, Ibaraki 316, Japan.
Syubo Taya
Affiliation:
Ibaraki University, Faculty of Engineering, Hitachi, Ibaraki 316, Japan.
Satoru Ozawa
Affiliation:
Ibaraki University, Faculty of Engineering, Hitachi, Ibaraki 316, Japan.
Ryoichi Yamamoto
Affiliation:
Tokyo University, Institute of Industrial Science, Minato-ku, Tokyo 106, Japan.
Get access

Abstract

The initial stage of film formation process was studied by 2 dimensional (2D) Monte-Carlo (MC) simulation and 3D molecular dynamics (MD) simulation. The atomistic interaction was simple pair-wise Lcnnard-Joncs potential for the 2D MC study and embedded atom potential (EAM potential) for the 3D MD simulation. The 2D MC study has revealed the dependence of film growth mode on the potential parameters that correspond to atomic size and binding energy. More realistic MD simulation has been performed using EAM potential for the three kinds of systems, Ni/Cu(111), Ag/Cu(111) and Au/Ni(111). The relaxed atomic structures of such systems showed the difference of atomic combination; coherent interface was obtained for Ni/Cu(111) system, incoherent interface with specific rotational relationships for Ag/Cu(111) andAu/Ni(111).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 399
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Schneider, M., Rahman, A and Schuller, I.K.: Phys. Rev. B 34, 1802 (1986).CrossRefGoogle Scholar
[2] Schneider, M., Schuller, I.K. and Rahman, A : Phys. Rev. B 36, 1340 (1987).CrossRefGoogle Scholar
[3] Luedtke, W.D. and Landman, U. : Phys.Rev. B 44, 5970 (1991).CrossRefGoogle Scholar
[4] Ozawa, S. and Sasajima, Y. : Vacuum 41, 1109 (1990).CrossRefGoogle Scholar
[5] Foiles, S.M., Baskes, M.I. and Daw, M.S. : Phys. Rev. B33, 7983 (1986).CrossRefGoogle Scholar