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Computer Simulation of Thermomigration Process

Published online by Cambridge University Press:  10 February 2011

V. Yu. Gershanov
Affiliation:
Department of Physics, Rostov State University, 5 Zorge Str., Rostov on Don 344090, Russia, [email protected]
S. I. Garmashov
Affiliation:
Department of Physics, Rostov State University, 5 Zorge Str., Rostov on Don 344090, Russia
A. R. Minyaev
Affiliation:
Department of Physics, Rostov State University, 5 Zorge Str., Rostov on Don 344090, Russia
A. V. Beletskaya
Affiliation:
Department of Physics, Rostov State University, 5 Zorge Str., Rostov on Don 344090, Russia
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Abstract

Mathematical model of thermomigration of liquid inclusions through a crystal under stationary and non-stationary thermal conditions is presented. It is assumed that the mass-transfer is provided by diffusion only, the crystallization and dissolution processes are carried out in accordance with the diffuse interface mechanism for atomic-rough (non-singular) interfaces and screw-dislocation or two-dimension nucleation mechanisms for singular interfaces.

The package of computer programs based on this model enables simulation of the evolution of the cross-sectional shape of cylindrical liquid inclusions. It is possible to simulate the cases of various inclusion sizes, various relationship between the interface and volume mass-transfer restrictions, various liquid phase composition, thermal gradient under stationary and non-stationary thermal conditions as well. The main results of the simulation are presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Pfann, W.G., Trans. AIME 203, p. 961 (1955).Google Scholar
2. Anthony, T.R. and Cline, H.E., J. Appl. Phys., 47, 6, pp. 25512557 (1976).Google Scholar
3. Tiller, W.A., J. Appl. Phys., 34, 9, pp. 27572762 (1963).Google Scholar
4. Cline, H.E. and Anthony, T.R., J. Appl. Phys., 48, 12, pp. 50965104 (1977).Google Scholar
5. Cline, H.E. and Anthony, T.R., J. Appl. Phys., 49, 5, pp. 27772786 (1978).Google Scholar
6. Hurle, D.T.J., Mullin, J.B. and Pike, E.R., J. Maters. Sci. 2, 1, pp. 4662 (1967).Google Scholar
7. Anthony, T.R. and Cline, H.E., J. Appl. Phys., 42, 9, pp. 33803391 (1971).Google Scholar
8. Gershanov, V. Yu. and Garmashov, S.I., Crystallogr. (Russia), 37, 1, pp. 3442 (1992).Google Scholar
9. Gershanov, V. Yu. and Garmashov, S.I., Mater. Res. Soc. Abstracts, San-Francisco, 1994, p. 472(W7.28).Google Scholar
10. Gershanov, V. Yu. and Garmashov, S.I., Mater. Res. Soc. Abstracts, San-Francisco, 1994, p. 472(W7.29).Google Scholar