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Computer Simulation of Surface Diffusion of Silicon and Carbon Adatoms on SiC(001)

Published online by Cambridge University Press:  15 February 2011

Q. A. Bhatti ,
G. J. Moran  and
C. C. Matthai
Q. A. Bhatti
Affiliation:
Department of Physics and Astronomy, University of Wales College of Cardiff, P.O. Box 913, Cardiff CF2 3YB, Wales, UK
G. J. Moran
Affiliation:
Department of Physics and Astronomy, University of Wales College of Cardiff, P.O. Box 913, Cardiff CF2 3YB, Wales, UK
C. C. Matthai
Affiliation:
Department of Physics and Astronomy, University of Wales College of Cardiff, P.O. Box 913, Cardiff CF2 3YB, Wales, UK
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Abstract

We have performed molecular dynamics simulations of adatom diffusion on the SiC(001) surface and found that the barriers for carbon adatoms is less than that for silicon adatoms. The diffusion paths were also found to be temperature dependent and at high temperatures the adatom diffusion constant was found to of the order of 10−5 cm2 s−1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 439
Copyright
Copyright © Materials Research Society 1996

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