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Computer Simulation of Ion Beam Enhanced Deposition of Titanium Nitride Films

Published online by Cambridge University Press:  25 February 2011

Wang Xi ,
Zhou Jiankun ,
Chen Youshan ,
Liu Xianghuai  and
Zou Shichang
Wang Xi
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Zhou Jiankun
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Chen Youshan
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Liu Xianghuai
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Zou Shichang
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
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Abstract

A Monte-Carlo computer simulation has been performed to describe, at atomic level, the growth of titanium nitride films formed by ion beam enhanced deposition (IBED). The simulation is based on a random target, fixed free path of moving particles and binary collisions. An alternate process of deposition of titanium atoms and implantation of nitrogen ions is applied instead of the actual continuous and synchronous process of IBED. According to the actual conditions, the adsorption of nitrogen gas, which is leaked out from the ion source, at the fresh titanium layer surface has been considered. In addition, the change of the composition profile and the density profile during film growth is taken into account. It is demonstrated that the width of the intermixed region between the film and substrate increases with the increase of the atomic arrival ratio, R, of implanted nitrogen ions to deposited titanium atoms. When the titanium deposition rate is low, the nitrogen concentration of the film is relatively insensitive to R, indicating that a dominant contribution to the nitrogen concentration is derived from the nitrogen gas leaked out from the ion source. The results obtained in this study are in agreement with the experimental measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 91
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1 Rossnagel, S.M. and Cuomo, J.J., MRS Bulletin, 16,40 (1987).Google Scholar
2 Kant, R.A., Sartwell, B.D., Singer, I.L. and Vardiman, R.G., Nucl. Instrum. Meth. Phys. Res. B7/8, 915 (1985).Google Scholar
3 Kunibe, T., Tagomori, K., Sumiya, T., Chida, N., Matsuura, M. and Sakurada, Y., Nucl. Instrum. Meth. Phys. Res. B39, 170 (1989) .Google Scholar
4 Jiankun, Zhou, Xianghuai, Liu, Youshan, Chen, Zhihong, Zheng, Wei, Huang, Zuyao, Zhou and Shichang, Zou presented at the 1988 MRS Fall Meeting, Boston, MA, 1988 (unpublished).Google Scholar
5 Muller, K.H., Appl. Phys. A40, 209 (1986).Google Scholar
6 Muller, K.H., Appl. Phys. 59, 2803 (1986).Google Scholar
7 Jiankun, Zhou, Youshan, Chen, Xianghuai, Liu and Shichang, Zou, Nucl. Instrum. Meth. Phys. Res. B39, 182 (1989).Google Scholar
8 Roth, A., Vacuum Technology, (North-Holland publishers, Amsterdam, 1976), pp. 35–173.Google Scholar
9 Biersack, J.P. and Eckstein, W., Appl. phys. A34, 73 (1984).Google Scholar
10 Ziegler, J.F., Biersack, J.P. and Littmark, U., The Stopping and Range of Ion in Solids, (Pergamon publishers, New York, 1985), pp. 41–59.Google Scholar