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Computer Simulation of Electron Microscope Images from Atomic Structure Models

Published online by Cambridge University Press:  25 February 2011

William Krakow*
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

It is generally the case that simple direct interpretation of high resolution electron microscope images is not possible due to the phase contrast imaging modes necessary to achieve atomic level spatial resolution. Therefore, an extensive number of computer programs have been developed to perform electron diffraction and image computations. Both single scattering or dynamical scattering processes can be simulated as well as any form of imaging mode currently available on most modern high performance transmission electron microscopes. Since one is interested in imperfections rather than perfect crystal structures, a large number of sampling points in real and reciprocal space are required. Often, large atom position arrays must be sampled requiring large mainframe computer memories and fast CPU's. High quality displays are also required for realistic image representations and even faster computational methods via television rate digital frame store devices. This paper will be centered about a number of materials areas requiring high resolution electron microscopy computer simulation from atomic structure models. These areas include: organometallic molecules, point defects, surface structure and reconstructions, amorphous thin films, quasi-crystals, semiconductor interfaces and grain boundary structure in metals.

Type
Articles
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Krakow, W., Chang, A.L.J. and Sass, S.L., Phil. Mag. 35 (1977) 575.CrossRefGoogle Scholar
2. Krakow, W., Ultramicrosc. 1 (1976) 203.CrossRefGoogle Scholar
3. Krakow, W., IBM J. Res. Devel. 251 (1981) 58.CrossRefGoogle Scholar
4. Krakow, W., Ultramicrosc. (1985) in press.Google Scholar
5. Ottensmeyer, F.P., Schmidt, E.E. and Olbrecht, A.J., Science 179 (1973) 175.Google Scholar
6. Krakow, W., Ultramicrosc. 1 (1976) 203.CrossRefGoogle Scholar
7. Benedek, R. and Ho, P.S., J. Phys. F. 3 (1973) 1285.CrossRefGoogle Scholar
8. Krakow, W., J. Nucl. Mat. 74 (1978) 314.Google Scholar
9. Krakow, W., Ultramicrosc. 4 (1979) 55.CrossRefGoogle Scholar
10. Krakow, W., Ultramicrosc. 5 (1980) 175.Google Scholar
11. Tan, T.Y., Foll, H. and Krakow, W., Appl. Phys. Lett. 37 (1981) 1102.CrossRefGoogle Scholar
12. Krakow, W., Tan, T.Y. and Föll, H., Inst. Phys. Conf. Ser. No. 60 (1981) 23.Google Scholar
13. Krakow, W., Tan, T.Y. and Föll, H., Defects in Semiconductors (1981) 185.Google Scholar
14. Krakow, W., Proc. 38th Ann. Electron Microsc. Soc. of Amer., San Francisco, CA (1980) 178.Google Scholar
15. Chaudhari, P. and Levi, A., Phys. Rev. Lett. 43 (1979) 1517.CrossRefGoogle Scholar
16. Krakow, W., Thin Sol. Films 93 (1982) 109.CrossRefGoogle Scholar
17. Krakow, W., Thin Sol. Films 93 (1982) 235.CrossRefGoogle Scholar
18. Legoues, F., Krakow, W. and Ho, P., Mat. Res. Soc. Symp. Proc. 37, Boston Mass., (1984) 396.CrossRefGoogle Scholar
19. MacKay, A.L., Physica 114A (1982) 609.Google Scholar
20. Flanigen, E.M., Bennett, J.M., Grose, R.W., Cohen, J.P., Patton, R.L., Kirchner, R.M. and Smith, J.V., Nature 271 (1978) 512.CrossRefGoogle Scholar