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Computer Simulation of Channeling Profile Analysis of Implantation Damage

Published online by Cambridge University Press:  10 February 2011

Matthias Posselt
Matthias Posselt*
Affiliation:
Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, P.O.Box 510119, D-01314 Dresden, Germany
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Abstract

Channeling profile analysis is simulated using the dynamic binary collision code Crystal- TRIM. A good agreement between theoretical and experimental data is found for silicon targets which were predamaged by Si+ ions of different energies and analyzed by 140 keV B+ ions. For each example the depth profile of the defects relevant for the dechanneling of the analyzing ions is given. An estimate of the annealing of such defects is obtained by comparison of results for as-implanted and annealed samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 532: Symposium EE – Silicon Front-End Technology - Materials Processing & Modeling , 1998 , 133
Copyright
Copyright © Materials Research Society 1998

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References

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