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Computer Modelling of Non-Equilibrium Multiple-Trapping and Hopping Transport in Amorphous Semiconductors

Published online by Cambridge University Press:  01 February 2011

C. Main ,
J. M. Marshall ,
S. Reynolds ,
M.J. Rose  and
R. Brüggemann
C. Main
Affiliation:
University of Dundee, Division of Electronic Engineering and Physics, Dundee DD1 4HN, U.K.
J. M. Marshall
Affiliation:
University of Wales Swansea, Singleton Park, Swansea SA2 8PP, U.K.
S. Reynolds
Affiliation:
Institute of Photovoltaics, Forschungszentrum Jülich, 52425 Jülich, Germany
M.J. Rose
Affiliation:
University of Dundee, Division of Electronic Engineering and Physics, Dundee DD1 4HN, U.K.
R. Brüggemann
Affiliation:
Fachbereich Physik, Carl von Ossietzky Universität Oldenburg, Germany
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Abstract

In this paper we demonstrate a simple computational procedure for the simulation of transport in a disordered semiconductor in which both multi-trapping and hopping processes are occurring simultaneously. We base the simulation on earlier work on hopping transport, which used a Monte-Carlo method. Using the same model concepts, we now employ a stochastic matrix approach to speed computation, and include also multi-trapping transitions between localised and extended states. We use the simulation to study the relative contributions of extended state conduction (with multi-trapping) and hopping conduction (via localised states) to transient photocurrents, for various distributions of localised gap states, and as a function of temperature. The implications of our findings for the interpretation of transient photocurrents are examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A15.3
Copyright
Copyright © Materials Research Society 2005

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References

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