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Computer Modelling of Laser Annealing

Published online by Cambridge University Press:  15 February 2011

P. Baeri
P. Baeri*
Affiliation:
Istituti di Fisica dell'Università, Corso Italia 57, 195129 Catania, Italy
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Abstract

Heat flow calculations, based on the main assumption that the energy of the incident pulse is instantaneously and locally converted into heat, are used to review the results of laser pulse annealing and impurities behaviour in ion implanted semiconductors. The crystallization behaviour of amorphous layers, the velocity of the solid-liquid interface and impurity redistribution are detailed with the main emphasis on the relevance of the parameters (laser wavelen gth, pulse duration and energy density, substrate temperature, etc.) that can be experimentally controlled. Comparison with the latest experimental results is also given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 151
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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