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Computed Structures of [001] Symmetrical Tilt Boundaries in Covalently Bonded Materials

Published online by Cambridge University Press:  25 February 2011

J. T. Wetzel ,
A. A. Levi  and
D. A. Smith
J. T. Wetzel
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
A. A. Levi
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
D. A. Smith
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
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Abstract

The dependence of the structure of (210) and (310) symmetrical [001] tilt boundaries in silicon, germanium and diamond on the Keating covalent force field (potential) has been investigated by computer modelling. We have found that the sensitivity of grain boundary structure to variations of the Keating potential depends on the local atomic arrangement at the grain boundary.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 63: Symposium R – Computer-Based Microscopic Description of the Structure and Properties of Materials , 1985 , 157
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Hornstra, J., Physica 25, 409 (1959)Google Scholar
2. Hornstra, J., Physica 26, 198 (1960)Google Scholar
3. Vaudin, M. D., Cunningham, B. and Ast, D. G., Scripta Metall. 17, 191 (1983)Google Scholar
4. Pond, R. C., Bacon, D. J. and Bastaweesy, A. M., in Inst. Phys. Conf. Series No. 67, Section 4, 253 (1983).Google Scholar
5. Wetzel, J.T., Levi, A.A. and Smith, D.A., to be published in the Proc. Jap. Inst. of Metals Int. Conf. on Grain Boundary StructureGoogle Scholar
6. Lapiccirella, A. and Lodge, K.W., in Inst. Phys. Conf. Series No. 60, Section 1, 51 (1981)Google Scholar
7. Keating, P. N., Phys. Rev. 145, 637 (1960)Google Scholar
8. Brodsky, M. H., Kirkpatrick, S. and Weaire, D., in Tetrahedrally Bonded Amorphous Semiconductors, A.I.P. Conf. Proc. No. 20 (1974).Google Scholar
9. Bacmann, J.J., Papon, A.M. and Petit, M., J. de Phys. 43, Coll. C-1, 15 (1982)Google Scholar
10. Sutton, A.P and Vitek, V., Phil. Trans. Roy. Soc., A309, 1 (1983)Google Scholar