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Computationally Efficient Model for 2D Ion Implantation Simulation

Published online by Cambridge University Press:  10 February 2011

Misha Temkin  and
Ivan Chakarov
Misha Temkin
Affiliation:
SILVACO International, Inc. 4701 Patrick Henry Dr. Bldg.2, Santa Clara, CA 95054
Ivan Chakarov
Affiliation:
SILVACO International, Inc. 4701 Patrick Henry Dr. Bldg.2, Santa Clara, CA 95054
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Abstract

A computationally efficient method for ion implantation simulation is presented. The method allows two-dimensional ion implantation profiles in arbitrary shaped structures to be calculated and is valid for both amorphous and crystalline materials. It uses an extension of the one-dimensional dual Pearson approximation into the second dimension.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 27
Copyright
Copyright © Materials Research Society 1998

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References

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