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Computational Study of the Electronic Performance of Cross-Plane Superlattice Peltier Devices

Published online by Cambridge University Press:  14 March 2011

Changwook Jeong ,
Gerhard Klimeck  and
Mark Lundstrom
Changwook Jeong
Affiliation:
Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana, USA
Gerhard Klimeck
Affiliation:
Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana, USA
Mark Lundstrom
Affiliation:
Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana, USA
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Abstract

We use a state-of-the-art non-equilibrium quantum transport simulation code, NEMO-1D, to address the device physics and performance benchmarking of cross-plane superlattice Peltier coolers. Our findings show quantitatively how barriers in cross-plane superlattices degrade the electrical performance, i.e. power factor. The performance of an In0.53Ga0.47As/In0.52Al0.48As cross-plane SL Peltier cooler is lower than that of either a bulk In0.53Ga0.47As or bulk In0.52Al0.48As device, mainly due to quantum mechanical effects. We find that a cross-plane SL device has a Seebeck coefficient vs. conductance tradeoff that is no better than that of a bulk device. The effects of tunneling and phase coherence between multi barriers are examined. It is shown that tunneling, SL contacts, and coherency only produce oscillatory behavior of Seebeck coefficient vs. conductance without a significant gain in PF. The overall TE device performance is, therefore, a compromise between the enhanced Seebeck coefficient and degraded conductance.

Keywords

thermoelectricnanostructurethermionic emission
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1314: Symposium LL – Thermoelectric Materials for Solid-State Power Generation and Refrigeration , 2011 , mrsf10-1314-ll05-09
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

[1] Majumdar, A., “MATERIALS SCIENCE: Enhanced: Thermoelectricity in Semiconductor Nanostructures,” Science, vol. 303, Feb. 2004, pp. 777–778.Google Scholar
[2] Snyder, G.J. and Toberer, E.S., “Complex thermoelectric materials,” Nat Mater, vol. 7, Feb. 2008, pp. 105–114.Google Scholar
[3] Chen, G., Dresselhaus, M.S., Dresselhaus, G., Fleurial, J.P., and Caillat, T., “Recent developments in thermoelectric materials,” International Materials Reviews, vol. 48, 2003, p. 45.Google Scholar
[4] Venkatasubramanian, R., Siivola, E., Colpitts, T., and O’Quinn, B., “Thin-film thermoelectric devices with high room-temperature figures of merit,” Nature, vol. 413, Oct. 2001, pp. 597–602.Google Scholar
[5] Hicks, L.D., Harman, T.C., and Dresselhaus, M.S., “Use of quantum-well superlattices to obtain a high figure of merit from nonconventional thermoelectric materials,” Applied Physics Letters, vol. 63, Dec. 1993, pp. 3230–3232.Google Scholar
[6] Hicks, L.D. and Dresselhaus, M.S., “Effect of quantum-well structures on the thermoelectric figure of merit,” Physical Review B, vol. 47, May. 1993, p. 12727.Google Scholar
[7] Whitlow, L.W. and Hirano, T., “Superlattice applications to thermoelectricity,” Journal of Applied Physics, vol. 78, 1995, p. 5460.Google Scholar
[8] Mahan, G.D. and Woods, L.M., “Multilayer Thermionic Refrigeration,” Physical Review Letters, vol. 80, May. 1998, p. 4016.Google Scholar
[9] Shakouri, A., LaBounty, C., Piprek, J., Abraham, P., and Bowers, J.E., “Thermionic emission cooling in single barrier heterostructures,” Applied Physics Letters, vol. 74, 1999, p. 88.Google Scholar
[10] Kim, W., Zide, J., Gossard, A., Klenov, D., Stemmer, S., Shakouri, A., and Majumdar, A., “Thermal Conductivity Reduction and Thermoelectric Figure of Merit Increase by Embedding Nanoparticles in Crystalline Semiconductors,” Physical Review Letters, vol. 96, Feb. 2006, p. 045901.Google Scholar
[11] Zide, J., Vashaee, D., Bian, Z.X., Zeng, G., Bowers, J.E., Shakouri, A., and Gossard, A.C., “Demonstration of electron filtering to increase the Seebeck coefficient in In0.53Ga 0.47As/In0.53Ga0.28Al0.19As superlattices,” Physical Review B, vol. 74, Nov. 2006, pp. 205335–5.Google Scholar
[12] Heremans, J.P., Thrush, C.M., and Morelli, D.T., “Thermopower enhancement in lead telluride nanostructures,” Physical Review B, vol. 70, 2004, p. 115334.Google Scholar
[13] Klimeck, G., Lake, R., Bowen, R.C., Frensley, W.R., and Moise, T.S., “Quantum device simulation with a generalized tunneling formula,” Applied Physics Letters, vol. 67, 1995, pp. 2539–2541.Google Scholar
[14] Klimeck, G., Lake, R., Bowen, R.C., Frensley, W.R., and Blanks, D., “Nano electronic modelling (NEMO),” Device Research Conference, 1995. Digest. 1995 53rd Annual, IEEE, 2002, pp. 52–53.Google Scholar
[15] Klimeck, G., “NEMO 1-D: the first NEGF-based TCAD tool,” Simulation of semiconductor processes and devices 2004: SISPAD 2004, 2004, p. 9.Google Scholar
[16] Kim, R., Jeong, C., and Lundstrom, M.S., “On momentum conservation and thermionic emission cooling,” Journal of Applied Physics, vol. 107, 2010, p. 054502.Google Scholar