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Computational Modeling of Homogeneous Nucleation and Particle Growth During Chemical Vapor Deposition of Silicon Films from Silane Plasmas

Published online by Cambridge University Press:  01 February 2011

S Warthesen ,
U Bhandarkar ,
S Girshick  and
U Kortshagen
S Warthesen
Affiliation:
Department of Mechanical Engineering, University of Minnesota, Minneapolis MN 55455, USA.
U Bhandarkar
Affiliation:
Department of Mechanical Engineering, University of Minnesota, Minneapolis MN 55455, USA.
S Girshick
Affiliation:
Department of Mechanical Engineering, University of Minnesota, Minneapolis MN 55455, USA.
U Kortshagen
Affiliation:
Department of Mechanical Engineering, University of Minnesota, Minneapolis MN 55455, USA.
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Abstract

We have been developing a model to study the nucleation and growth of particles in silane plasmas. Presently we are experimenting with parameters that could potentially be important. It has been found that an increase in the heavy species gas temperature leads to a delay in the nucleation of particles in low pressure silane plasmas. This effect could be useful in tailoring processes for the manufacture of new materials such as polymorphous silicon. We have made an effort to study this effect using a plasma chemistry model. The model includes gas temperature dependent electron attachment and vibrational relaxation of excited species with a view to study their importance in relation to the gas temperature. Preliminary simulation results predict that these two processes do not contribute substantially to slowing the nucleation process when the gas temperature is increased. Extra efforts must be made to study this potentially important effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A19.2
Copyright
Copyright © Materials Research Society 2002

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References

1. Longuead, C Kleider, J P Cabarrocas, P Rocai, Hamma, S Meaudre, R and Meaudre, M Journal of Non-Crystalline Solids, 227-230, 96–99 (1998).10.1016/S0022-3093(98)00217-8Google Scholar
2. Cabarrocas, P Rocai, Journal of Non-Crystalline Solids, 266-269, 31, (2000).10.1016/S0022-3093(99)00714-0Google Scholar
3. Butte, R Vignoli, S Meaudre, M Meaudre, R Marty, O Saviot, L and Cabarrocas, P Rocai, Journal of Non-Crystalline Solids (2000).Google Scholar
4. Morral, A Fontcubertai. PhD thesis, LPICM, Ecole Polytechnique (2001).Google Scholar
5. Bouchoule, A Plain, A Boufendi, L Blondeau, J Ph, and Laure, C J. Appl. Phys, 70(4), 1991 (1991).10.1063/1.349484Google Scholar
6. Bouchoule, A and Boufendi, L Plasma Sources Sci. and Technol., 3, 292 (1994).10.1088/0963-0252/3/3/009Google Scholar
7. Fridman, A A Boufendi, L Hbid, T H Potapkin, B V and Bouchoule, A J. Appl. Phys., 79(3), 1303 (1996).10.1063/1.361026Google Scholar
8. Bhandarkar, U. V., Swihart, M.T., Girshick, S.L., and Kortshagen, U. R., J. Phys. D: Appl. Phys. 33, 2731 (2000).Google Scholar
9. Meeks, E., Larson, R. S., Ho, P., Apblett, C., Han, S. M., Edelberg, E., and Aydil, E. S., J. Vac. Sci. Technol. A 16(2), 544 (1998).10.1116/1.581096Google Scholar
10. Perrin, J., Leroy, O., and Bordage, M.C., Contrib. Plasma Phys. 36(1), 3 (1996).Google Scholar
11. Bouchoule, A., Dusty Plasmas (John Wiley and Sons, LTD, Chichester, 1999) p. 116.Google Scholar