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Comprehensive Study of the Electrothermal Operation of SiC Power Devices Using a Fully Coupled Physical Transport Model
Published online by Cambridge University Press: 15 March 2011
Abstract
Based on an extended electrothermal drift-diffusion model formulated within the framework of phenomenological transport theory, a consistent set of material parameters for 4H- and 6H-SiC is presented. Furthermore we report on detailed numerical studies of the coupled effect between transient impurity kinetics and impact ionization, which alters the reverse blocking characteristics of power devices under short switching conditions.
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- Research Article
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- Copyright © Materials Research Society 2000