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Comprehensive Study of Impact Ionization Coefficients of 4H-SiC

Published online by Cambridge University Press:  15 March 2011

T. Hatakeyama ,
T. Watanabe ,
K. Kojima ,
N. Sano ,
T. Shinohe  and
K. Arai
T. Hatakeyama
Affiliation:
Corporate Research & Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
T. Watanabe
Affiliation:
Corporate Research & Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
K. Kojima
Affiliation:
National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center, Tsukuba Center 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
N. Sano
Affiliation:
Institute of Applied Physics, University of Tsukuba 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, Japan
T. Shinohe
Affiliation:
Corporate Research & Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
K. Arai
Affiliation:
National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center, Tsukuba Center 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Abstract

The electric field dependence and anisotropy of the impact ionization coefficients of 4H-SiC are investigated by means of the avalanche breakdown behavior of p+n diodes. The breakdown voltages as a function of doping density and the multiplication factors of a leakage current are obtained using p+n diode fabricated on (0001) and (1120) 4H-SiC epitaxial wafers. The obtained impact ionization coefficients show large anisotropy; the breakdown voltage of a p+n diode on (1120) wafer is 60% of that on (0001) wafer. We have shown that anisotropy of the impact ionization coefficients is attributable to the anisotropy of saturation velocity originated from the electronic structure of 4H-SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J9.3
Copyright
Copyright © Materials Research Society 2004

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