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Comprehensive Kinetic of Defects in a-SI:H

Published online by Cambridge University Press:  21 February 2011

David Redfield  and
Richard H. Bube
David Redfield
Affiliation:
Stanford University, Department of Materials Science and Engineering, Stanford, CA 94305
Richard H. Bube
Affiliation:
Stanford University, Department of Materials Science and Engineering, Stanford, CA 94305
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Abstractl

The introduction of several new principles into the analysis of transition kinetics of metastable defects in a-Si:H has produced substantially improved rate equation for the density of defects as functions of time, light intensity, and temperature. The solution of this equation is stretched exponential (SE) having properties that explain in unifying way many observations of defect properties, including generation and anneal of the defect density in homogeneous films and degradation and anneal of solar cells. Major consequences are found for both the steady-state and transient properties of the defect density and for interpretations of microscopic models of the defects. These properties are also shown to be analogous to those of metastable centers in other materials, particularly the metastable DX center in AlGaAs which offers rare insight into the microscopic origins of stretched exponentials that can be applied to a-Si:H in ways that provide new perspectives on effects of alloying and hydrogen on stability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 21
Copyright
Copyright © Materials Research Society 1991

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References

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