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Comprehensive Investigation of Traps in GaAs/A1GaAs Heterostructures and Superlattices by DLTS

Published online by Cambridge University Press:  26 February 2011

G. Papaioannou ,
G. Kiriakidis ,
A. Georgakilas  and
A. Christou
G. Papaioannou
Affiliation:
University of Athens, Physics Department, Athens, Greece
G. Kiriakidis
Affiliation:
Foundation for Research & Technology-Hellas, P.O. Box Heraklion, Crete, Greece
A. Georgakilas
Affiliation:
Foundation for Research & Technology-Hellas, P.O. Box Heraklion, Crete, Greece
A. Christou
Affiliation:
Naval Research Laboratory, Code 6830, Washington, DC 20375, U.S.A.
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Abstract

The electron traps of GaAs/AlGaAs heterostructures or superlattices (S.L.) have been investigated in a series of device structures which ranged from simple Schottky diodes to high electron mobility transistors. For the S.L. structure traps investigated, emission into the El miniband as well as A1GaAs trapping was considered. In simple heterostructures such as HEMTs, DLTS investigation of electron trapping from the 2DEG channel revealed a number of new traps, which were previously undetected with CTS (Current Transient Spectroscopy) investigations of the 2DEG. Interface traps in GaAs/AIGaAs heterojunctions were also investigated and distinguished from previously reported traps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 151
Copyright
Copyright © Materials Research Society 1989

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References

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