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Compound Formation And Silicon Behavior In Titanium And Tantalum Layered Aluminum Films

Published online by Cambridge University Press:  26 February 2011

B. W. Shen ,
J. M. Anthony ,
P-H. Chang ,
J. Keenan ,
R. Matyi  and
H. L. Tsai
B. W. Shen
Affiliation:
Semiconductor Process and Design Center, Texas Instruments. Inc. P.O. Box 225621. M.S. 944, Dallas, Texas75265.
J. M. Anthony
Affiliation:
Central Research Laboratory, Texas Instruments. Inc. P.O. Box 225621. M.S. 944, Dallas, Texas75265.
P-H. Chang
Affiliation:
Central Research Laboratory, Texas Instruments. Inc. P.O. Box 225621. M.S. 944, Dallas, Texas75265.
J. Keenan
Affiliation:
Central Research Laboratory, Texas Instruments. Inc. P.O. Box 225621. M.S. 944, Dallas, Texas75265.
R. Matyi
Affiliation:
Central Research Laboratory, Texas Instruments. Inc. P.O. Box 225621. M.S. 944, Dallas, Texas75265.
H. L. Tsai
Affiliation:
Central Research Laboratory, Texas Instruments. Inc. P.O. Box 225621. M.S. 944, Dallas, Texas75265.
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Abstract

Thin film interaction in the material systems of titanium and tantalum-layered Al- 1% Si films has been studied using advanced material characterization techniques. Compound phase formation was analyzed based on results from X-ray diffraction analysis. Al3Ti was identified in the titanium-layered film after 450° C sintering. TaSi2 and unreacted Ta. however, were identified after the sintering. Silicon participated in the phase formation process by incorporating itself as a solute in the Al3Ti while transforming Ta into its silicide. This behavior is to be interpreted based on available ternary phase diagrams. Cross-sectional transmission electron microscopy results indicate that well defined layered films and columnar grains of aluminum were obtained which are believed to be the primary reasons for the observed electromigration improvement over the base metal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 103
Copyright
Copyright © Materials Research Society 1986

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References

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