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Compositional Ordering in InxGa1-xN and its influence on optical properties

Published online by Cambridge University Press:  01 February 2011

Z. Liliental-Weber ,
D. N. Zakharov ,
K. M. Yu ,
J. Wu ,
S. X. Li ,
J.W. Ager III ,
W. Walukiewicz ,
E.E. Haller ,
H. Lu  and
W. J. Schaff
Z. Liliental-Weber
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Lab, Berkeley, CA 94720
D. N. Zakharov
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Lab, Berkeley, CA 94720
K. M. Yu
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Lab, Berkeley, CA 94720
J. Wu
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Lab, Berkeley, CA 94720 Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720
S. X. Li
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Lab, Berkeley, CA 94720 Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720
J.W. Ager III
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Lab, Berkeley, CA 94720
W. Walukiewicz
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Lab, Berkeley, CA 94720
E.E. Haller
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Lab, Berkeley, CA 94720 Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720
H. Lu
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853
W. J. Schaff
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853
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Abstract

InxGa1-x N layers grown with compositions with the predicted miscibility gap have been studied using Transmission Electron Microscopy (TEM), x-ray diffraction and optical measurements (photoluminescence and absorption). The samples (0.34 < × < 0.8) were deposited by Molecular Beam Epitaxy at 800°C using 200 nm AlN buffer layer grown directly on sapphire substrates. Another sample with × = 0.34 was grown on a GaN buffer layer. Dislocation densities in the InGaN layers were typically in the mid-1010 cm−2 to1011 cm−2 range. Edge dislocations were the most prevalent. For In concentration × = 0.5 compositional ordering is observed leading to extra diffraction spots in electron and x-ray diffraction. The ordering was not observed for the sample with x=0.34 grown on GaN. Based on TEM measurements the estimated period of ordering Δ was about Δ = 45 Å for × = 0.5 and Δ = 65Å for × = 0.78. The sample with × = 0.5 had the highest dislocation density. In addition to the presence of threading dislocations two types of domain boundaries on (0001) and (0110) planes were also observed in this sample. This sample has a broader photoluminescence (PL) that is redshifted compared to the absorption edge (“Stokes shift”).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E11.19
Copyright
Copyright © Materials Research Society 2005

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