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Compositional Determination of Silicon Oxynitride Films

Published online by Cambridge University Press:  26 February 2011

Kenneth S. Hatton ,
John B. Wachtman Jr ,
Richard A. Haber  and
Barry Wilkens
Kenneth S. Hatton
Affiliation:
Rutgers University, Center for Ceramics Research Box 909, Piscataway, NJ 08854
John B. Wachtman Jr
Affiliation:
Rutgers University, Center for Ceramics Research Box 909, Piscataway, NJ 08854
Richard A. Haber
Affiliation:
Rutgers University, Center for Ceramics Research Box 909, Piscataway, NJ 08854
Barry Wilkens
Affiliation:
Bell Communications, Piscataway, NJ 08854
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Abstract

Silicon oxynitride thin films made by RF reactive sputtering can be made with varying composition along the silicon dioxide - silicon nitride tie line by control of the sputtering gases. Compositional determination was made by the Rutherford backscattering technique. A simple model relating film composition to the composition of the reactive gases is proposed which fits the experimental results.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 715
Copyright
Copyright © Materials Research Society 1987

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References

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