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Compositional Determination of Silicon Oxynitride Films
Published online by Cambridge University Press: 26 February 2011
Abstract
Silicon oxynitride thin films made by RF reactive sputtering can be made with varying composition along the silicon dioxide - silicon nitride tie line by control of the sputtering gases. Compositional determination was made by the Rutherford backscattering technique. A simple model relating film composition to the composition of the reactive gases is proposed which fits the experimental results.
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