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Composition Profiling of Graded Dielectric Function Materials by Spectroscopic Ellipsometry

Published online by Cambridge University Press:  10 February 2011

S. Trolier-Mckinstry
Affiliation:
Department of Materials Science and Engineering/Intercollege Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802
J. Koh
Affiliation:
Department of Materials Science and Engineering/Intercollege Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802
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Abstract

Spectroscopic ellipsometry (SE) is a powerful optical tool for non-destructively depth-profiling the dielectric function of samples with a resolution in the Ångstrom range. In this work, the characterization of graded composition layers in transparent materials by SE is described. In modeling studies on the sensitivity limits of the technique, it has been shown that for known index profile shapes, the depth sensitivity can be quite high. For example, diffusion of Na2O into the surface of a vitreous silica sample can be detected for layers as thin as 100Å when the maximum refractive index contrast is only 0.005. The sensitivity of the technique increases as the diffusion depth and refractive index contrast increases. The accuracy of the thickness determination depends on the total thickness of the graded layer; for a given system, the accuracy of the composition measurements do not depend on the surface concentration.

Leached alkali-aluminosilicate and modified lead silicate glasses were examined by SE to experimentally confirm the modeling predictions on the composition depth profiling. Extremely good correlation between the SE-determined depth profile and SIMS measurements on similar samples was obtained for the case of the modified lead silicate glass. For the aluminosilicate glass, simultaneous roughening of the glass surface during etching makes composition profiling more difficult.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1. Heyd, A. R., Spectroscopic Ellipsometry and its Application to HII-V Semiconductors Ph. D. Thesis, The Pennsylvania State University (1993).Google Scholar
2. Snyder, P. G., Rost, M. C., Bu-Abbud, G. H., Woolam, J. A., and Alterovitz, S. A., J. Appl. Phys. 60 3293 (1986).Google Scholar
3. Fried, M., Lohner, T., Aamink, W. A. M., Hanekamp, L. J., and Van Silfhout, A., J. Appl. Phys. 71 2835 (1992).Google Scholar
4. Koh, J., The Sensitivity Limits of Spectroscopic Ellipsometry for the Characterization of Opical Coatings, M.S. Thesis, The Pennsylvania State University, (1995).Google Scholar
5 Mazurin, D. V., Shvaikovskaya, S., and Streltsina, M. V., Handbook of Glass Data, Part A (Elsevier, New York, 1985)Google Scholar
6 Bansal, N. P. and Doremus, R. H., Handbook of Glass Properties (Academic Press, Orlando, 1986)Google Scholar
7 Malitson, I. H., J. Opt. Soc. Am. 55 1205 (1965).Google Scholar
8 D'Souza, A. and Pantano, C. G., manuscript accepted by Phys. Chem. Glasses.Google Scholar