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Composition of β-FeSi2 Thin-Films Grown by a Pulsed Laser Deposition Method

Published online by Cambridge University Press:  11 February 2011

Shin-ichiro Uekusa ,
Masahiro Yamamoto ,
Keiichi Tsuchiya  and
Noboru Miura
Shin-ichiro Uekusa
Affiliation:
School of Sci. & Tech., Meiji University, 1–1–1 Higashi-mita, Tama-ku Kawasaki-shi, Kanagawa 214–8571, Japan
Masahiro Yamamoto
Affiliation:
School of Sci. & Tech., Meiji University, 1–1–1 Higashi-mita, Tama-ku Kawasaki-shi, Kanagawa 214–8571, Japan
Keiichi Tsuchiya
Affiliation:
School of Sci. & Tech., Meiji University, 1–1–1 Higashi-mita, Tama-ku Kawasaki-shi, Kanagawa 214–8571, Japan
Noboru Miura
Affiliation:
School of Sci. & Tech., Meiji University, 1–1–1 Higashi-mita, Tama-ku Kawasaki-shi, Kanagawa 214–8571, Japan
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Abstract

We prepared othorhombic β-FeSi2 thin-films on Si(111) substrates by a pulsed laser deposition method (PLD) and studied the relationship between bandgap energy and composition ratio by themal annealing of β-FeSi2 thin-films on Si substrate. When the substrate temperature was 500·°C, β-FeSi2 thin-films were grown on Si(111) substrates. The sample prepared on Si(111) substrate was a monocrystalline structure since only (220) or (202) signals of β-FeSi2 were observed. A large amount of defects existed in the thin film. These defects were reduced by using high temperature and long time annealing. Heat treatment of 20 hours or more time was effective for reducing diffect. The iron diffusion of β-FeSi2/Si interface was observed by RBS spectra. Composition ratio of the prepared β-FeSi2 was Fe:Si=30:70. As-deposition β-FeSi2 was Si-rich. The p-n diode characteristics of these heterostructure diodes were investigated by C-V measurements. β-FeSi2/Si interface prepared by 400· °C was an ideal one-side step junction. The surface roughness was decreased by annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.38
Copyright
Copyright © Materials Research Society 2003

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References

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