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Composition Dependence of the Band Gap Energy of InxGal-xN Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

J. Wagner ,
A. Ramakrishnan ,
D. Behr ,
M. Maier ,
N. Herres ,
M. Kunzer ,
H. Obloh  and
K.-H. Bachem
J. Wagner
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany, [email protected]
A. Ramakrishnan
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany, [email protected]
D. Behr
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany, [email protected]
M. Maier
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany, [email protected]
N. Herres
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany, [email protected]
M. Kunzer
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany, [email protected]
H. Obloh
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany, [email protected]
K.-H. Bachem
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany, [email protected]
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Abstract

We report on the composition dependence of the band gap energy of strained hexagonal InGal-,N layers on GaN with x≤0.15, grown by metal-organic chemical vapor deposition on sapphire substrates. The composition of the (InGa)N was determined by secondary ion mass spectroscopy. High-resolution X-ray diffraction measurements confirmed that the (InGa)N layers with typical thicknesses of 30 nm are pseudomorphically strained to the in-plane lattice parameter of the underlying GaN. Room-temperature photoreflection spectroscopy and spectroscopic ellipsometry were used to determine the (InGa)N band gap energy. The composition dependence of the band gap energy of the strained (InGa)N layers was found to be given by EG(x)=3.43-3.28.x (eV) for x≤0.15. When correcting for the strain induced shift of the fundamental energy gap, a bowing parameter of 3.2 eV was obtained for the composition dependence of the gap energy of unstrained (InGa)N.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G2.8
Copyright
Copyright © Materials Research Society 1999

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