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Composition, Bonding state, and Electrical Properties of Carbon Nitride Films Formed by Electrochemical Deposition Technique

Published online by Cambridge University Press:  02 March 2011

Hideo Kiyota ,
Mikiteru Higashi ,
Tateki Kurosu  and
Masafumi Chiba
Hideo Kiyota
Affiliation:
Department of Mechanical Systems Engineering, Tokai University, 9-1-1 Toroku, Kumamoto 862-8652, Japan
Mikiteru Higashi
Affiliation:
Department of Mechanical Systems Engineering, Tokai University, 9-1-1 Toroku, Kumamoto 862-8652, Japan
Tateki Kurosu
Affiliation:
Department of Applied Computer Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
Masafumi Chiba
Affiliation:
Department of Materials Chemistry, Tokai University, 317 Nishino, Numazu, Shizuoka 410-0395, Japan
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Abstract

Composition, bonding state, and electrical properties of CNx films formed by electro-chemical deposition using liquid acrylonitrile were studied. X-ray photoelectron spectra reveal that C, N, and O are major components of the deposited films. From analysis of C 1s and N 1s spectra, the major bonding state in the CNx film is attributed to a mixture of C≡N and partially hydrogenated C=N bond. Metal-insulator-semiconductor capacitors incorporating the CNx insulating layers are fabricated to evaluate the electrical properties of the deposited films. The lowest dielectric constant k of the CNx film is determined to be 2.6 from the accumulation capacitance and the thickness of the film. It is demonstrated that the CNx film formed by electrochemical deposition is a promising low-k material for use in ultralarge-scale integration multilevel interconnections.

Keywords

electrochemical synthesisdielectricC
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1282: Symposium A – Diamond Electronics and Bioelectronics—Fundamentals to Applications IV , 2011 , mrsf10-1282-a05-33
Copyright
Copyright © Materials Research Society 2011

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