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Complex magnetic response in magnetic tunnel junctions determined via magnetic and transport measurements

Published online by Cambridge University Press:  10 February 2011

R. Guerrero
Affiliation:
Dpto. de Fisica de la Materia Condensada, C-III, Universidad Autonoma de Madrid, 28049, Madrid, Spain
V. V. Pryadun
Affiliation:
Dpto. de Fisica de la Materia Condensada, C-III, Universidad Autonoma de Madrid, 28049, Madrid, Spain
F. G. Aliev*
Affiliation:
Dpto. de Fisica de la Materia Condensada, C-III, Universidad Autonoma de Madrid, 28049, Madrid, Spain
R. Villar
Affiliation:
Dpto. de Fisica de la Materia Condensada, C-III, Universidad Autonoma de Madrid, 28049, Madrid, Spain
J. L. Martinez
Affiliation:
ICMM-CSIC, Cantoblanco, 28049, Madrid, Spain
J. Moodera
Affiliation:
Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139, USA
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Abstract

We have studied the low frequency complex magnetization dynamics in Co/Al2O3/Ni80Fe20 magnetic tunnel junctions (MTJs) at temperatures between 4.2K and 300K. The measurements were carried out by using two different experimental techniques. The first method probes directly magnetic properties via DC magnetization and AC susceptibility, while the second one measures AC magnetization dynamics of the ferromagnetic electrodes near the cross area, which is related to the tunnelling resistance.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

[1] Moodera, J.S., Kinder, L.R., Wong, T.M. and Meservey, R., PRL, 74, 3273 (1995).Google Scholar
[2] Parkin, Stuart. S.P., “Spin-Polarized Transport in Magnetic Tunnel Junctions and Magnetic Tunnel Transistors”- invited talk presented at Gordon Research Conference on magnetic nanostructures in Italy, 2002.Google Scholar
[3] Gider, S., et al., Science 281, 797 (1998).Google Scholar
[4] Hardner, H.T., Weismann, M.B., Salamon, M.B., Parkin, S.S.P., Phys. Rev. B48, 16156 (1993).Google Scholar
[5] Ingvarson, S., Xiao, G., Parkin, S.S.P., Gallagher, W.J., Grinstein, G., Koch, R.H., PRL, 85, 3289 (2000)Google Scholar
[6] Ripka, P., Tondra, M., Stokes, J., Beech, R., Sensors and Actuators, 76, 225 (1999).Google Scholar
[7] Ono, T., Miyajima, H., Shigeto, K., Mibu, K., Hosoito, N., Shinjo, T., Science, 284, 468 (1999).Google Scholar
[8] Tuisan, C., Hehn, M., Dimopolous, T., Ounadjela, K., J. Applied Physics, 89, 6668 (2001).Google Scholar
[9] Lenoble, O., Hehn, M., Lacour, D., Schuhl, A., Hrabovsky, D., Bobo, J.F., Diouf, B., Fert, A.R., Phys. Rev. B63, 05240 (2001).Google Scholar
[10] Bar'yakhtar, V.G., Ivanov, B.A., Chetkin, M.V., Sov. Phys. Usp. 28, 583 (1985).Google Scholar
[11] Papanicolaou, N., Phys. Rev. B55, 12290 (1997).Google Scholar