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Complex Defect Formation in Heat Treated Aluminium Doped Cz Silicon

Published online by Cambridge University Press:  26 February 2011

Andrew C. T. Drakeford  and
Edward C. Lightowlers
Andrew C. T. Drakeford
Affiliation:
Physics Department, King's College London, Strand, London WC2R 2LS, UK
Edward C. Lightowlers
Affiliation:
Physics Department, King's College London, Strand, London WC2R 2LS, UK
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Abstract

Resistivity and photoluminescence measurements have been made on Al-doped CZ Si, with high and with low C concentrations, heat treated at 450°C. The results are compared with those obtained from nominally undoped CZ Si with a low residual B concentration. It is shown that Al acceptors are completely lost, presumably by the removal of Al from substitutional sites by exchange with Si self interstitials generated during oxygen aggregation. Luminescence features observed are tentatively identified with electronic transitions at neutral Al-C and Al-thermal donor complexes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 209
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Kaiser, W., Frisch, H.L. and Reiss, H., Phys.Rev. 112, 1546 (1958)Google Scholar
2.Bean, A.R. and Newman, R.C., J.Phys.Chem. Solids 33, 255 (1972)Google Scholar
3.Stavola, M., in Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, edited by Mikkelsen, J.C. Jr, Pearton, S.T., Corbett, J.W. and Pennycooke, S.J. (Mater.Res.Soc.Proc. 59, Pittsburgh PA; 1986) p 7Google Scholar
4.Newman, R.C., this volume.Google Scholar
5.Newman, R.C., J.Phys.C: Solid St.Phys. 18, L967 (1985)Google Scholar
6.Newman, R.C., Oates, A.S. and Livingston, F.M., J.Phys.C: Solid St.Phys. 16 L667 (1983)Google Scholar
7.Watkins, G.D. and Corbett, J.W., Phys.Rev. 138, A543 (1965)Google Scholar
8.Fuller, C.S., Doleiden, F.H. and Wolstirn, K., J.Phys.Chem.Solids,13,187(1960)Google Scholar
9.Colley, P.M. and Lightowlers, E.C., Semicond.Sci.Technol. 2,157 (1987)Google Scholar
10.Thurber, W.R., Mattis, R.L., Liu, Y.M. and Filliben, J.J., The Relationship between Resistivity and Dopant Density in Phosphorous- and Boron-Doped Silicon. NBS Special Publication 400–64 (Washington, DC, US Government Printing Office 1981)Google Scholar
11.Tkachev, V.D. and Mudryi, A.V., Inst.Phys.Conf.Series 31, 231 (1977)Google Scholar
12.Davies, G, Lightowlers, E.C., Woolley, R., Newman, R.C. and Oates, A.S., J.Phys.C: Solid St.Phys. 17, L499 (1984)Google Scholar
13.Tajima, M., Kishino, S., Kanamori, M. and Iizuka, T., J.Appl.Phys. 51,2247 (1980)Google Scholar
14.Nakayama, H., Nishino, T. and Hamakawa, Y., Appl.Phys.Letters 38,623 (1981)Google Scholar
15.Thewalt, M.L.W., Steele, A.G., Watkins, S.P. and Lightowlers, E.C., Phys.Rev. Letters, 57, 1939 (1986)Google Scholar
16.Henry, M.O., private communication.Google Scholar