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Competitive Etching and Oxidation of Vicinal Si(100) Surfaces

Published online by Cambridge University Press:  01 February 2011

Marvin A. Albao
Affiliation:
Ames Laboratory – U.S. Department of Energy, Iowa State University, Ames, Iowa, 50010 Departments of Physics and Astronomy, Iowa State University, Ames, Iowa, 50010
Da-Jiang Liu
Affiliation:
Ames Laboratory – U.S. Department of Energy, Iowa State University, Ames, Iowa, 50010
Cheol H. Choi
Affiliation:
Ames Laboratory – U.S. Department of Energy, Iowa State University, Ames, Iowa, 50010 Department of Chemistry, Kyungpook National University, Taegu 702–701, South Korea
Mark S. Gordon
Affiliation:
Ames Laboratory – U.S. Department of Energy, Iowa State University, Ames, Iowa, 50010 Chemistry, Iowa State University, Ames, Iowa, 50010
J. W. Evans
Affiliation:
Ames Laboratory – U.S. Department of Energy, Iowa State University, Ames, Iowa, 50010 Mathematics, Iowa State University, Ames, Iowa, 50010
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Abstract

Exposure of a vicinal Si(100) surface to oxygen at around 550 C produces etching-mediated step recession. In addition, some oxide islands are formed which locally pin receding steps. We develop an atomistic lattice-gas model for this process which accounts for the interplay between oxygen surface chemistry (adsorption, diffusion, oxide formation, and etching via SiO desorption) and the silicon surface and step dynamics (anisotropic diffusion and aggregation of di-vacancies formed by etching, and ad-dimer attachment-detachment dynamics at steps incorporating anisotropic energetics). Kinetic Monte Carlo simulation of this model produces step morphologies retaining some qualitative but not quantitative features of their equilibrium structure (alternating rough SB steps and smooth SA steps), except for pinning which produces protruding “fingers”. These features are seen in Scanning Tunneling Microscopy studies.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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