Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-27T02:35:52.006Z Has data issue: false hasContentIssue false
  • English
  • Français

Competitive Etching and Oxidation of Vicinal Si(100) Surfaces

Published online by Cambridge University Press:  01 February 2011

Marvin A. Albao ,
Da-Jiang Liu ,
Cheol H. Choi ,
Mark S. Gordon  and
J. W. Evans
Marvin A. Albao
Affiliation:
Ames Laboratory – U.S. Department of Energy, Iowa State University, Ames, Iowa, 50010 Departments of Physics and Astronomy, Iowa State University, Ames, Iowa, 50010
Da-Jiang Liu
Affiliation:
Ames Laboratory – U.S. Department of Energy, Iowa State University, Ames, Iowa, 50010
Cheol H. Choi
Affiliation:
Ames Laboratory – U.S. Department of Energy, Iowa State University, Ames, Iowa, 50010 Department of Chemistry, Kyungpook National University, Taegu 702–701, South Korea
Mark S. Gordon
Affiliation:
Ames Laboratory – U.S. Department of Energy, Iowa State University, Ames, Iowa, 50010 Chemistry, Iowa State University, Ames, Iowa, 50010
J. W. Evans
Affiliation:
Ames Laboratory – U.S. Department of Energy, Iowa State University, Ames, Iowa, 50010 Mathematics, Iowa State University, Ames, Iowa, 50010
Get access

Abstract

Exposure of a vicinal Si(100) surface to oxygen at around 550 C produces etching-mediated step recession. In addition, some oxide islands are formed which locally pin receding steps. We develop an atomistic lattice-gas model for this process which accounts for the interplay between oxygen surface chemistry (adsorption, diffusion, oxide formation, and etching via SiO desorption) and the silicon surface and step dynamics (anisotropic diffusion and aggregation of di-vacancies formed by etching, and ad-dimer attachment-detachment dynamics at steps incorporating anisotropic energetics). Kinetic Monte Carlo simulation of this model produces step morphologies retaining some qualitative but not quantitative features of their equilibrium structure (alternating rough SB steps and smooth SA steps), except for pinning which produces protruding “fingers”. These features are seen in Scanning Tunneling Microscopy studies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 859: Symposium JJ – Modeling of Morphological Evolution at Surfaces and Interfaces , 2004 , JJ3.6
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Engel., T., Surf. Sci. Rep. 18, 91 (1993).Google Scholar
2. Hannon, J.B., Bartelt, M.C., Bartelt, N.C., and Kellogg, G.L., Phys. Rev. Lett. 81, 4676 (1998).Google Scholar
3. Fundamental Aspects of Silicon Oxidation, Y.J. Chabal, Ed. (Springer, Berlin, 2001).Google Scholar
4. Seiple, J.V. and Pelz, J.P., Phys. Rev. Lett. 73, 999 (1994).Google Scholar
5. Seiple, J.V. and Pelz, J.P., J. Vac. Sci. Technol. A 13, 772 (1995).Google Scholar
6. Ebner., C., Seiple, J.V., and Pelz, J.P., Phys. Rev. B 52, 16651 (1995).Google Scholar
7. Seiple, J.V., Ebner., C., and Pelz, J.P., Phys. Rev. B 53, 15432 (1996).Google Scholar
8. Albao, M.A., Liu., D.-J., Choi, C.H., Gordon, M.S., and Evans, J.W., Surf. Sci. 555, 51 (2004).Google Scholar
9. Zandvliet., H., Rev. Mod. Phys. 72, 593 (2000).Google Scholar
10. Wurm., K., Kliese., R., Hong., Y., Rottger., B., Wei., Y., et al., Phys. Rev. B 50 (1994) 1567.Google Scholar
11. Zhang, Z. and Metiu., H., Phys. Rev. B 48, 8166 (1993).Google Scholar
12. Choi, C.H., Liu., D.-J., Evans, J.W., and Gordon, M.S., J. Am. Chem. Soc. 124, 8730 (2002).Google Scholar
13. Esteve., A., Chabal, Y.J., Raghavachari., K., et al., J. Appl. Phys. 90, 6000 (2001).Google Scholar
14. Zhang., Z., Wu., F., Zandvliet, H. J. W., Poelsema., B., et al., Phys. Rev. Lett. 74, 3644 (1995).Google Scholar
15. Borovsky., B., Krueger., M., and Ganz., E., Phys. Rev. Lett. 78, 4229 (1997).Google Scholar
16. Kitamura., N., Lagally, M.G., and Webb, M.B., Phys. Rev. Lett. 71 (1993) 2082.Google Scholar
17. Mo, Y. W., Kleiner., J., Webb, M. B., and Lagally, M. G., Phys. Rev. Lett. 66, 1998 (1991).Google Scholar
18. Voigtlander., B., Weber., T., Smilauer., P., and Wolf, D.E., Phys. Rev. Lett. 78, 2164 (1998).Google Scholar
19. Bartelt, N.C., Tromp, R.M., and Williams, E.D., Phys. Rev. Lett. 73, 1656 (1994).Google Scholar
20. Theis, W. and Tromp, R.M., Phys. Rev. Lett. 76, 2770 (1996).Google Scholar
21. Bartelt, M.C. and Evans, J.W., Euro. Phys. Lett. 21, 99 (1993).Google Scholar