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Comparison of Trapping States at SiO2/Si Interfaces on si(100), (110), and (111) Prepared by Plasma-Assisted Oxidation and Oxide Deposition, and by Exposure to Atomic H Prior to Oxidation and Deposition

Published online by Cambridge University Press:  03 September 2012

T. Yasuda ,
Y. Ma ,
S. Habermehl  and
G. Lucovsky
T. Yasuda
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
Y. Ma
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
S. Habermehl
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
G. Lucovsky
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
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Abstract

S1O2 layers, ∼ 15 nm thick, were formed on Si (100), (110), and (111) surfaces by a low-temperature, 200–300°C, plasma-assisted oxidation/deposition process sequence. The distribution of the trap density at the S1O2/Si interface, and in the Si band-gap, Dit, was deduced from capacitance-voltage, C-V, measurements. The values of Dit at midgap varied with crystal orientation in a similar way as in thermally grown oxides. In addition, the low-temperature oxides displayed a characteristic and intrinsic dangling bond state, the so-called Pb center, at ∼0.3 eV above the Si valence-band edge. Samples exposed to atomic H prior to the oxidation and deposition steps, showed an increase in Dit due to a roughening of the Si surfaces, which produced additional broad bands of defect states, at ∼0.5 and ∼0.7 eV above the Si valence-band edge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 473
Copyright
Copyright © Materials Research Society 1992

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References

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