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A Comparison of Thermal, Line-Source Electron Beam and CW Laser Annealing for the Fabrication of Ersi2 Schottky Barrier on Si.

Published online by Cambridge University Press:  22 February 2011

C. S. Wu ,
D.M. Scott ,
S. S lau ,
A. Wakita ,
T. W. Sigmon ,
J. A. Knapp  and
S. T. Picraux
C. S. Wu
Affiliation:
University of California at San Diego, La Jolla, CA 92093
D.M. Scott
Affiliation:
University of California at San Diego, La Jolla, CA 92093
S. S lau
Affiliation:
University of California at San Diego, La Jolla, CA 92093
A. Wakita
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
T. W. Sigmon
Affiliation:
University of California at San Diego, La Jolla, CA 92093
J. A. Knapp
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
S. T. Picraux
Affiliation:
University of California at San Diego, La Jolla, CA 92093
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Abstract

ErSi2 contacts formed by reacting Er with single crystal silicon using conventional furnace heat treatment are dominated by pits. Recently rapid electron and laser beam heating have been used to form pit-free ErSi 2 layers on Si by reacting Er with the Si substrate. For this investigation we studied the electrical properties of erbium silicide/Si<p,100> contact prepared by thermal, laser and electron beam annealing. We prepared and annealed three types of samples; (I) Er(600Å)/Si<p,100>, (II) Si(100Å)/ Er(600Å)/Si<p,100> and (III) Si(900Å)/Er(600Å)/Si<p,100>.The barrier height of the pit-free thermal annealed samples (type III) was ∼0.78 eV. All laser and e-beam annealed samples were observed to be pit-free. The barrier heights for the laser annealed samples varied from ∼ 0.63 eV for type I samples to ∼ 0.77 eV for type III samples. The e-beam annealed samples gave barrier heights ∼ 0.71 eV (type I and II) and ∼ 0.77 eV for type III. The barrier heights of beam processed diodes shifted towards the 0.78 eV range upon post-annealing. We model these results in terms of defects created at the ErSi2-Si interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 93
Copyright
Copyright © Materials Research Society 1984

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References

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