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Comparison of the Band Gap of Porous Silicon as Measured by Photoelectron Spectroscopy and Photoluminescence

Published online by Cambridge University Press:  28 February 2011

T. Van Buuren
Affiliation:
Department of Physics and Department of Electrical Engineering, University of British Columbia, Vancouver, B.C. V6T-1Z1
S. Eisebitt
Affiliation:
Department of Physics and Department of Electrical Engineering, University of British Columbia, Vancouver, B.C. V6T-1Z1
S. Patitsas
Affiliation:
Department of Physics and Department of Electrical Engineering, University of British Columbia, Vancouver, B.C. V6T-1Z1
S. Ritchie
Affiliation:
Department of Physics and Department of Electrical Engineering, University of British Columbia, Vancouver, B.C. V6T-1Z1
T. Tiedje
Affiliation:
Department of Physics and Department of Electrical Engineering, University of British Columbia, Vancouver, B.C. V6T-1Z1
J. F. Young
Affiliation:
Department of Physics and Department of Electrical Engineering, University of British Columbia, Vancouver, B.C. V6T-1Z1
Yuan Gao
Affiliation:
Department of Physics, Simon Fraser University, Burnaby, B.C, V5A-1S6.
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Abstract

The peak energy of the room temperature photoluminescence of porous silicon is compared with the bandgap determined from photoelectron spectroscopy measurements for a series of porous silicon samples prepared under different conditions. The photoluminescence bandgap is found to be smaller than the photoelectron spectroscopy bandgap, but exhibits the same trend with preparation conditions. The width of both the photoluminescence spectrum and the L-absorption edge increases when the current density during the preparation is increased or the sample is allowed to soak in HF after preparation.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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