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Comparison of Oxygen and Hydrogen Gettering at High-Temperature Post-Implantation Annealing of Hydrogen and Helium Implanted Czochralski Silicon

Published online by Cambridge University Press:  10 February 2011

R. Job ,
W. R. Fahrner ,
A. I. Ivanov ,
L. Palmetshofer  and
A. G Ulyashin
R. Job
Affiliation:
University of Hagen, P. O. Box 940, D-58084 Hagen, Germany
W. R. Fahrner
Affiliation:
University of Hagen, P. O. Box 940, D-58084 Hagen, Germany
A. I. Ivanov
Affiliation:
Belarussian State Polytechnical Academy, Skariny Ave. 65, 220027, Minsk, Belarus
L. Palmetshofer
Affiliation:
J. Kepler University, A-4040 Linz, Austria
A. G Ulyashin
Affiliation:
Belarussian State Polytechnical Academy, Skariny Ave. 65, 220027, Minsk, Belarus
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Abstract

P-type Czochralski (Cz) Si was implanted with H (180 keV, 2.7.1016 cm−2) or He (300 keV, 1.1016 cm−2) ions. The gettering of O and H atoms by the buried implantation damage layers during annealing up to 4 hours (1000°C in H2 or N2 ambient) was studied by secondary ion mass spectroscopy (SIMS) and spreading resistance probe (SRP) measurements. Buried defect layers act as good getter centers for O and H atoms at appropriate heat treatments. The enhanced gettering of O atoms in H implanted Cz Si (as compared to the gettering of O in He implanted samples) as well as the enhanced gettering of O during annealing in H2 flow (as compared to N2 ambient) can be explained by a hydrogen enhanced O diffusion towards the defect layers. According to a strong accumulation of O at the buried damage layers and near the surface some anomalies of the SRP profiles can be observed after post-implantation annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 425
Copyright
Copyright © Materials Research Society 1998

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