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Comparison of Ordered and Modulated Structures in InGaP Alloy Semiconductors grown by MOCVD, Chloride-Vpe and LPE Methods

Published online by Cambridge University Press:  25 February 2011

O Ueda ,
T. Kato ,
T. Matsumoto ,
M. Hoshino ,
M. Takechi  and
M. Ozeki
O Ueda
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
T. Kato
Affiliation:
Yamanashi University, 4-3-11 Takeda, Kofu 400, Japan
T. Matsumoto
Affiliation:
Yamanashi University, 4-3-11 Takeda, Kofu 400, Japan
M. Hoshino
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
M. Takechi
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
M. Ozeki
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
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Abstract

Ordered and modulated structures in InGaP alloy semiconductors grown on (001) GaAs substrates by metalorganic chemical vapor deposition, chloride-vapor phase epitaxy, and liquid phase epitaxy have been systematically studied by transmission electron microscopy. In InGaP grown by metalorganic chemical vapor deposition at 630°C, strong ordering of CuPt-type has been observed, which is associated with an abnormality in the photoluminescence peak energy. For crystals grown by chloride-vapor phase epitaxy, CuPt-type ordered structures have also been observed. However, the degree of ordering is weaker in the latter case and crystals grown at 576-740°C exhibit normal photoluminescence peak energies. On the other hand, in crystals grown by liquid phase epitaxy, no superstructure spots are found in the electron diffraction patterns and the crystals exhibit normal photoluminescence peak energies. Modulated structures do not depend on the growth method since they are observed in all crystals. From these results, it has been concluded that the ordered structures are not generated under thermal equilibrium conditions but rather by the diffusion and reconstruction of deposited atoms on the growth surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 901
Copyright
Copyright © Materials Research Society 1990

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