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A Comparison of Millisecond Annealing of B Implants and Isothermal Annealing for Times of a Few Seconds

Published online by Cambridge University Press:  25 February 2011

R. A. Mcmahon ,
D. G. Hasko ,
H. Ahmed ,
W. M. Stobbs  and
D. J. Godfrey
R. A. Mcmahon
Affiliation:
Microcircuit Engineering Laboratory, Cambridge University, Cambridge Science Park, Cambridge, CB4 4BH, U.K.
D. G. Hasko
Affiliation:
Microcircuit Engineering Laboratory, Cambridge University, Cambridge Science Park, Cambridge, CB4 4BH, U.K.
H. Ahmed
Affiliation:
Microcircuit Engineering Laboratory, Cambridge University, Cambridge Science Park, Cambridge, CB4 4BH, U.K.
W. M. Stobbs
Affiliation:
Department of Metallurgy and Materials Science, Pembroke Street, CambridgeCB2 3QZ, U.K.
D. J. Godfrey
Affiliation:
GEC, Hirst Research Centre, East Lane, Wembley, MiddlesexHA9 7PP, U.K.
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Abstract

The annealing behaviour of B implants in the millisecond time regime using a combination of swept line beam and background heating is compared with isothermal annealing with heating cycles of a few seconds. Carrier concentration profiles derived from spreading resistance measurements show that under annealing conditions which restrict diffusion, millisecond processing gives higher activation of B implants than isothermal heating. Transmission electron microscopy shows that millisecond annealing also results in a lower defect density than that following an equivalent isothermal anneal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 347
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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