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Comparison of Low Vapor Pressure Organoarsenic Compounds for Movpe Growth of GaAs

Published online by Cambridge University Press:  26 February 2011

R.M. Lum  and
J.K. Kiingert
R.M. Lum
Affiliation:
AT&T Bell Laboratories, Crawfords Corner Rd., Holmdel, NJ 07733
J.K. Kiingert
Affiliation:
AT&T Bell Laboratories, Crawfords Corner Rd., Holmdel, NJ 07733
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Abstract

We have investigated the use of various alkylarsine compounds as alternatives to arsine in the metalorganic vapor phase epitaxy (MOVPE) of GaAs. These As-precursors, which include homologues of methyl, ethyl and butyl-based compounds, are typically low vapor pressure liquids and thus much safer to handle than arsine, which is a toxic high pressure gas. To enable a direct comparison of the alkylarsine and arsine sources, measurement of their growth and thermal decomposition properties were obtained in the same reactor under identical conditions. The composition and purity of the precursor compound was observed to affect both the film growth rate and its electrical and optical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 53
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Johnson, E., Tsui, R., Convey, D., Mellen, N. and Curless, J., J. Gryst. Growth 68, 497 (1984).CrossRefGoogle Scholar
2. Lum, R.M., Klingert, J.K., and Duff, B.V., J. Cryst. Growth 75, 421 (1986).CrossRefGoogle Scholar
3. Hess, K.L. and Riccio, R.J., J. Cryst. Growth 77, 95 (1986).Google Scholar
4. Messham, R.L. and Tucker, W.K., J. Cryst. Growth 77, 101 (1986).Google Scholar
5. Lum, R.M., Klingert, J.K. and Kisker, D.W., J. Appl. Phys. 66, 652 (1989).CrossRefGoogle Scholar
6. Breckenridge, C., Collins, C., Hollomby, B., Lulham, G., and Ecobichon, D.J., presented at the Society of Toxicology Annual Meeting, Salt Lake City, UT, 1983, (unpublished).Google Scholar
7. American Cyanamid Company, Wayne, NJ 07470, Application Note 1, (November 1987).Google Scholar
8. CVD Inc., Woburn, MA 01801 (private communication).Google Scholar
9. Lum, R.M. and Klingert, J.K., J. Appl. Phys. (to be published, October 1989).Google Scholar
10. Hoke, W.E., Lemonias, P.J., and Korenstein, R., J. Mater. Res. 3, 329 (1988).Google Scholar
11. Johnson, E.T. (private communication).Google Scholar
12. Bhat, R., Koza, M.A., and Skromme, B.J., Appl. Phys. Left. 50, 1194 (1987).CrossRefGoogle Scholar
13. Lee, P.W., Omstead, T.R., McKenna, D.R., and Jensen, K.F., J. Cryst. Growth 85, 165 (1987).Google Scholar
14. Larsen, C.A., Buchan, N.I., and Stringfellow, G.B., Appl. Phys. Lett. 52, 480 (1988).Google Scholar
15. Lum, R.M., Klingert, J.K, Kisker, D.W., Abys, S.M., and Stevie, F.A., J. Cryst. Growth, 93, 120 (1988).Google Scholar
16. Lum, R.M., Klingert, J.K., Wynn, A.S. and Lamont, M.G., Appl. Phys. Lett., 55, 1475 (1988).Google Scholar
17. Haacke, G., Watkins, S.P., and Burkhard, H., Appl. Phys. Left., 54, 2029 (1989).Google Scholar
18. Lurm, R.M. and Klingert, J.K., presented at the 1989 MRS Meeting, San Diego, CA, 1989 (unpublished).Google Scholar