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Comparison of ion beam and electron beam induced transport of hot charge carriers in metal-insulator-metal junctions

Published online by Cambridge University Press:  12 July 2011

Johannes Hopster ,
Detlef Diesing ,
Andreas Wucher  and
Marika Schleberger
Johannes Hopster
Affiliation:
Universität Duisburg-Essen, Fakultät für Physik, 47048 Duisburg, Germany
Detlef Diesing
Affiliation:
Universität Duisburg-Essen, Fakultät für Physikalische Chemie, 45117 Essen, Germany
Andreas Wucher
Affiliation:
Universität Duisburg-Essen, Fakultät für Physik, 47048 Duisburg, Germany
Marika Schleberger
Affiliation:
Universität Duisburg-Essen, Fakultät für Physik, 47048 Duisburg, Germany
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Abstract

The generation of hot charge carriers within a solid bombarded by charged particles is investigated using biased thin film metal-insulator-metal (MIM) devices. For slow, highly charged ions approaching a metal surface the main dissipation process is electronic excitation of the substrate, leading to electron emission into the vacuum and internal electron emission across the MIM junction. In order to gain a deeper understanding of the distribution and transport of the excited charge carriers leading to the measured device current, we compare ion induced and electron induced excitation processes in terms of absolute internal emission yields as well as their dependence on the applied bias voltage.

Keywords

electron irradiationmetal-insulator transitionion-solid interactions
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1354: Symposium II – Ion Beams—New Applications from Mesoscale to Nanoscale , 2011 , mrss11-1354-ii07-12
Copyright
Copyright © Materials Research Society 2011

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References

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