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A Comparison of Intrinsic Point Defect Properties in Si and Ge

Published online by Cambridge University Press:  01 February 2011

Jan Vanhellemont ,
Piotr Spiewak ,
Koji Sueoka ,
Eddy Simoen  and
Igor Romandic
Jan Vanhellemont
Affiliation:
[email protected], Ghent University, Department of Solid State Sciences, Krijgslaan 281 S1, Ghent, N/A, Belgium
Piotr Spiewak
Affiliation:
[email protected], Warsaw University of Technology, Materials Design Division, Faculty of Materials Science and Engineering, Woloska 141, Warsaw, N/A, Poland
Koji Sueoka
Affiliation:
[email protected], Okayama Prefectural University, Department of System Engineering, 111 Kuboki, Soja, Okayama, N/A, Japan
Eddy Simoen
Affiliation:
[email protected], IMEC, Kapeldreef 75, Leuven, N/A, Belgium
Igor Romandic
Affiliation:
[email protected], Umicore EOM, Watertorenstraat 33, Olen, N/A, Belgium
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Abstract

Intrinsic point defects determine to a large extent the semiconductor crystal quality both mechanically and electrically not only during crystal growth or when tuning polished wafer properties by thermal treatments, but also and not the least during device processing. Point defects play e.g. a crucial role in dopant diffusion and activation, in gettering processes and in extended lattice defect formation.

Available experimental data and results of numerical calculation of the formation energy and diffusivity of the intrinsic point defects in Si and Ge are compared and discussed. Intrinsic point defect clustering is illustrated by defect formation during Czochralski crystal growth.

Keywords

GeSidefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1070: Symposium E – Doping Engineering for Front-End Processing , 2008 , 1070-E06-05
Copyright
Copyright © Materials Research Society 2008

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References

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