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A Comparison of Ellipsometer and Rbs Analysis of Implant Damage in Silicon

Published online by Cambridge University Press:  15 February 2011

W. M. Paulson ,
S. R. Wilson ,
C. W. White  and
B. R. Appleton
W. M. Paulson
Affiliation:
Semiconductor Research and Development Laboratory, Motorola, Inc.5005 E. McDowell Road, Phoenix, Arizona, USA
S. R. Wilson
Affiliation:
Semiconductor Research and Development Laboratory, Motorola, Inc.5005 E. McDowell Road, Phoenix, Arizona, USA
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, USA
B. R. Appleton
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, USA
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Abstract

The purpose of this study is to analyze ion implant damage profile using RBS and ellipsometry. Silicon wafers were implanted with 75As at 100, 200 or 300 keV; doses were chosen to generate constant peak impurity concentrations at each energy. The samples were then analyzed using RBS to obtain damage- depth profiles and ellipsometry to obtain Δ,ψ parameters. At light doses decreasingΔ values correspond to increased scattering yield; at higher doses ψ increases rapidly as the scattering yield approaches the random value. The higher energy implants shift the Δ-ψ curves to larger ψ values. Multilayer structures, that include lightly damaged silicon on either side of the project range as well as more damaged near the projected range, are required to model the ellipsometer parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 523
Copyright
Copyright © Materials Research Society 1982

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References

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