Published online by Cambridge University Press: 15 February 2011
The purpose of this study is to analyze ion implant damage profile using RBS and ellipsometry. Silicon wafers were implanted with 75As at 100, 200 or 300 keV; doses were chosen to generate constant peak impurity concentrations at each energy. The samples were then analyzed using RBS to obtain damage- depth profiles and ellipsometry to obtain Δ,ψ parameters. At light doses decreasingΔ values correspond to increased scattering yield; at higher doses ψ increases rapidly as the scattering yield approaches the random value. The higher energy implants shift the Δ-ψ curves to larger ψ values. Multilayer structures, that include lightly damaged silicon on either side of the project range as well as more damaged near the projected range, are required to model the ellipsometer parameters.