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Comparison of Electron and Hole Initiated Impact Ionization in Zincblende and Wurtzite Phase Gallium Nitride

Published online by Cambridge University Press:  10 February 2011

E. Bellotti ,
I. H. Oguzman ,
J. Kölnik ,
K. F. Brennan ,
R. Wang  and
P. P. Ruderi
E. Bellotti
Affiliation:
School of ECE, Georgia Tech, Atlanta, GA, 30332, [email protected]
I. H. Oguzman
Affiliation:
National Semiconductor, Arlington, TX 76017
J. Kölnik
Affiliation:
Symbios Logic Corp., Colorado Springs, CO 80916
K. F. Brennan
Affiliation:
School of ECE, Georgia Tech, Atlanta, GA, 30332, [email protected]
R. Wang
Affiliation:
Dept. of Electrical Engineering, University of Minnesota, MN 55455
P. P. Ruderi
Affiliation:
Dept. of Electrical Engineering, University of Minnesota, MN 55455
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Abstract

In this paper, we present the first calculations of the electron and hole impact ionizatioi coefficients for both wurtzite and zincblende phase GaN as a function of the applied electrii field. The calculations are made using an ensemble Monte Carlo simulator including the ful details of the conduction and valence bands derived from an empirical pseudopotentia calculation. The interband impact ionization transition rates for both carrier species an determined by direct numerical integration including a wavevector dependent dielectric function It is found that the electron and hole ionization coefficients are comparable in zincblende Ga> at an applied field of ∼ 3 MV/cm, yet vary to a slight degree at both higher and lower applied field strengths. In the wurtzite phase, the electron and hole coefficients are comparable at hig] fields but diverge at lower applied fields. The most striking result is that the ionization rates an predicted to be substantially different for both carrier species between the two phases. It i predicted that the ionization rates for both carrier species in the zincblende phase are significanti; higher than in the wurtzite phase over the full range of applied fields examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 457
Copyright
Copyright © Materials Research Society 1997

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References

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