Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T16:53:50.775Z Has data issue: false hasContentIssue false
  • English
  • Français

Comparison of CPM, PDS and Optical Transmittance of Amorphous Carbon Nitride Films Made by a Nitrogen Radical Sputter Method

Published online by Cambridge University Press:  21 March 2011

Takashi Katsuno ,
Shoji Nitta  and
Hitoe Habuchi
Takashi Katsuno
Affiliation:
Department of Electrical Engineering, Gifu University, 1–1 Yanaido, Gifu, 501–1193 Japan
Shoji Nitta
Affiliation:
Department of Electrical Engineering, Gifu University, 1–1 Yanaido, Gifu, 501–1193 Japan
Hitoe Habuchi
Affiliation:
Department of Electrical and Computer Engineering, Gifu National College of Technology, Shinsei-Chou, Motosu, Gifu, 501–0495 Japan
Get access

Abstract

Amorphous carbon nitride films a-CNX, deposited in our laboratory by a radical sputter method, show high photosensitivity PS, where PS is the ratio of photoconductivity sP and dark-electrical conductivity sd. A-CNX made a layer-by-layer method, LLa-CNX, has the highest photosensitivity in our various preparation conditions. The photoconductivity in a-CNX and LLa-CNX shows dependence on photon energy in the range 2 eV to 6.2 eV. The constant photocurrent method (CPM), photothermal deflection spectroscopy (PDS) and optical transmittance spectra are used to obtain the information in the optical energy band gap and defect states. A-CNX and LLa-CNX are good photoconductors especially at energy higher than 3 eV. Therefore it is not difficult to obtain CPM spectra in the high photon energy region. CPM spectra are obtained by dc- and ac- measurements. The value of the absorption coefficient a spectra obtained by dc-CPM is larger than that of ac-CPM, which increases with increasing frequency of the measurement. In this paper, CPM data is used to discuss a model of density of states (DOS) of a-CNX by comparison with PDS and optical transmittance spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 675: Symposium W – Nanotubes, Fullerenes, Nanostructured and Disordered Carbon , 2001 , W12.3.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Habuchi, H., Nitta, S., Itoh, T., Hasegawa, S. and Nonomura, S., in ‘Advances in Superconductivity VI’, Vol. 2, edited Fujita, T. and Shinohara, Y., (Springer-Verlag, Tokyo, 1994) pp. 973–976.Google Scholar
2. Habuchi, H., Nitta, S., Maehara, H., and Nonomura, S., in ‘Fullerenes and Photonics IV’, edited by Kazafi, Z. H. (Proc. SPIE 3142, 1997) p. 184.Google Scholar
3. Hasegawa, S., Nishiwaki, T., Habuchi, H., Nitta, S. and Nonomura, S., Fullerene Sci. Technol. 3, 163 (1995).Google Scholar
4. Katsuno, T., Nitta, S., Habuchi, H., Iwasaki, T., Itoh, T. and Nonomura, S., in ‘Amorphous and Nanostructured Carbon’, edited by Sullivan, J. P., Robertson, J., Zhou, O., Allen, T. B., Coll, B. F. (Mater. Res. Soc. Proc. 593, Boston, MA, 1999) pp. 499–504.Google Scholar
5. Takada, N., Arai, K., Nitta, S. and Nonomura, S., Appl. Surf. Sci. 113, 274 (1997).Google Scholar
6. Iwasaki, T., Aono, M., Nitta, S., Habuchi, H., Itoh, T. and Nonomura, S., Diamond Related Mater. 8, 440 (1999).Google Scholar
7. Aono, M., Katsuno, T., Nitta, S., Itoh, T. and Nonomura, S., in ‘Amorphous and Nanostructured Carbon’, edited by Sullivan, J. P., Robertson, J., Zhou, O., Allen, T. B., Coll, B. F. (Mater. Res. Soc. Proc. 593, Boston, MA, 1999) pp. 493–498.Google Scholar
8. Aono, M., Nitta, S., Katsuno, T., Itoh, T. and Nonomura, S., Appl. Surf. Sci. 159–160, 341 (2000).Google Scholar
9. Hasegawa, S., Nitta, S. and Nonomura, S., J. Non-Cryst. Solids 198–200, 544 (1996).Google Scholar
10. Souto, S., Pickholz, M., dos Santos, M. C. and Alvarez, F., Phys. Rev. B 57, 2536 (1998).Google Scholar
11. dos Santos, M. C. and Alvarez, F., Phys. Rev. B 58, 13918 (1998).Google Scholar