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A Comparison of CH4:H2 and C2H6:H2 Morie of GaAs

Published online by Cambridge University Press:  21 February 2011

V. J. Law ,
G. A. C. Jones ,
M. Tewordt  and
H. Royal
V. J. Law
Affiliation:
Cavendish Laboratory, Madingley Rd, Cambridge, CB3 OHE, U.K.
G. A. C. Jones
Affiliation:
Cavendish Laboratory, Madingley Rd, Cambridge, CB3 OHE, U.K.
M. Tewordt
Affiliation:
Cavendish Laboratory, Madingley Rd, Cambridge, CB3 OHE, U.K.
H. Royal
Affiliation:
Plasma Technology, Yatton, Bristol, BS19 4AP, U.K.
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Abstract

A comparative study is made of CH4:H2 and CH3−CH3:H2 metal-organic reactive ion etching of molecular beam epitaxially grown GaAs. The etch rates are measured to be proportional to both CH4 and CH3−CH3 concentrations, with empirically determined order of reactions at 1.1 W.cm−2 of, 0.57 ± 0.1 and 0.32 ± 0.01. Approximately twice the number of CH4 molecules are required to produce the equivalent etch rate as CH3−CH3 molecules. The measured apparent activation energies are low, Ea ≤ 6 meV, and GaAs area loading effects are the same. These results indicate that methyl radicals are predominately responsible for the reaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 190: Symposium M – Plasma Processing and Synthesis of Materials III , 1990 , 247
Copyright
Copyright © Materials Research Society 1991

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References

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