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Comparison of a-Si1-xCx:H Layers Based on Methane, Di-, Tri- and Tetrasilylmethane as Feedstocks

Published online by Cambridge University Press:  21 February 2011

J. Fölsch ,
H. Rubel  and
H. Schade
J. Fölsch
Affiliation:
Phototronics Solartechnik GmbH, Hermann-Oberth-Strasse 9, D-8011 Putzbrunn, Federal Republic of Germany
H. Rubel
Affiliation:
Phototronics Solartechnik GmbH, Hermann-Oberth-Strasse 9, D-8011 Putzbrunn, Federal Republic of Germany
H. Schade
Affiliation:
Phototronics Solartechnik GmbH, Hermann-Oberth-Strasse 9, D-8011 Putzbrunn, Federal Republic of Germany
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Abstract

Using standard rf glow discharge deposition, we compare the properties of a-Si1-xCx:H films prepared with different carbon sources, namely methane and di-, tri- and tetrasilylme-thane (DSM, TSM and TetraSM). The optical bandgap EG was varied between 1.8 eV and 2.4 eV. All oua-Si1-xCx:H films exhibit low Urbach energies (EQ < 60 meV for EG< 2.0 eV) and low defect absorption, both determined by PDS. Using the silylmetha-nes as feedstocks, we do not find significant differences relative to our methane-based material. Independently of the carbon source material, the energy gap dependences of the film properties (photoconductivity, activation energy of the dark conductivity, Urbach energy and subbandgap defect absorption) show a distinct change around EG = 2.1 eV, which is interpreted as a consequence of structural changes with increasing carbon content.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 631
Copyright
Copyright © Materials Research Society 1992

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References

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