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A Comparison of Arsine and Tertiarybutylarsine as Precursors for the Selective Epitaxial Growth of GaAs and AlGaAs

Published online by Cambridge University Press:  25 February 2011

F.T.J. Smith
F.T.J. Smith*
Affiliation:
Eastman Kodak Company, Corporate Research Laboratories, Rochester, NY 14650-2011
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Abstract

We have investigated the use of tertiarybutylarsine (tBAs) as an As source in the surface-selective growth of GaAs and AlGaAs by low-pressure OMVPE. Deposition was carried out onto GaAs substrates partly masked with SiNx. Triethylgallium (TEGa) and trimethylaluminum (TMAl) were used as precursors along with either arsine or tBAs. Growth pressures were in the range 0.3 to 3.0 Torr. The usual trends of decreasing deposition on the mask with increasing temperature, decreasing group V/III ratio, and decreasing pressure were observed. At very low group V/III ratios, for either As precursor, single crystal material with a pitted surface was obtained. A reduction in the nucleation of polycrystalline material on the mask was observed when tBAs was used in place of AsH3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 117
Copyright
Copyright © Materials Research Society 1991

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References

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