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Comparison of AlGaAs Oxidation in MBE and MOCVD Grown Samples

Published online by Cambridge University Press:  21 March 2011

Y. Chen ,
A. Roshko ,
K. A. Bertness ,
D. W. Readey ,
A. A. Allerman ,
M. Tan  and
A. Tandon
Y. Chen
Affiliation:
National Institute of Standards and Technology
A. Roshko
Affiliation:
National Institute of Standards and Technology
K. A. Bertness
Affiliation:
National Institute of Standards and Technology
D. W. Readey
Affiliation:
Colorado School of Mines
A. A. Allerman
Affiliation:
Sandia National Laboratories
M. Tan
Affiliation:
Agilent Technologies
A. Tandon
Affiliation:
Agilent Technologies
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Abstract

Simultaneous wet-thermal oxidation of MBE and MOCVD grown AlxGa1−xAs layers (× = 0.1 to 1.0) showed that the epitaxial growth method does not influence the oxidation rate. Nearly identical oxidation depths were measured for samples grown by both techniques. It was found, however, that the oxidation rate is very sensitive to non-uniformities in the Al concentration in the AlxGa1−xAs layers, and that maintaining consistent and uniform Al concentrations is critical to achieving reproducible oxidation rates. The study also showed that the oxidation rate was not affected by the V/III ratio during growth nor by impurities at concentrations less than or equal to 10 ppm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H6.11.1
Copyright
Copyright © Materials Research Society 2002

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