Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-17T13:59:07.388Z Has data issue: false hasContentIssue false
  • English
  • Français

Comparison of 500nm InGaN/GaN QW Emission Properties Induced by Piezoelectric Field Effect and Phase Separation

Published online by Cambridge University Press:  17 March 2011

Bong Kee ,
J.M. Koh  and
Euijoon Yoon
Bong Kee
Affiliation:
School of materials science and engineering, Seoul national university, Seoul, Korea
J.M. Koh
Affiliation:
Samsung Electro-mechanics Co. Ltd. Suwon, Korea
Euijoon Yoon
Affiliation:
School of materials science and engineering, Seoul national university, Seoul, Korea
Get access

Abstract

Two kinds of InGaN/GaN single quantum well with emission wavelength of 500nm were obtained by employing piezoelectric effect and phase separation with different growth methods. Their emission properties are studied by measuring temperature and photo-excitation power dependent photoluminescence and electrolluminescence. The 500nm luminescence from the sample obtained by piezoelectric effect shows very weak temperature and excitation power dependent, on the other hand, it shows profound band tail broadening at both high temperature and low excitation power for phase separated sample which mean the strong localized state exist. We observed highly bright spots with longer wavelength then that of matrix in the phase separation sample and we believe that high emission efficiency can be obtained from these indium rich clusters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.19
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Chichibu, S., Azuhata, T., Sota, T., Nakamura, S., Appl. Phys. Lett. 69, 4188 (1996).Google Scholar
2. Narukawa, Y., Kawakami, Y., Fujita, S., Phys. Rev. B 55, R1938 (1997).Google Scholar
3. Kisielowski, C., Liliental-Weber, Z., Nakamura, S., Jpn. J. Appl. Phys. 36, 6932(1997).Google Scholar
4. O'Donnell, K.P., Martin, R. W., Middleton, P.G., Phys. Rev. Lett. 82, 237 (1999).Google Scholar
5. Takeuchi, T., Sota, S., Katsuragawa, M., Komori, M., Takeuchi, H., Amano, H., Akasaki, I., Jpn. J. Appl. Phys. 36, 382 (1997).Google Scholar
6. Hangleiter, A., Im, J.S., Kollmer, H., Heppel, S., Off, J., Scholz, F., MRS Internet J. Nitride Semicond. Res. 3, 15 (1998).Google Scholar
7. Perlin, P., Kisielowski, C., Iota, V., Weinstein, B., Mattos, L., Shapiro, N.A., kruger, J., Weber, E.R., Yang, J., Appl. Phys. Lett. 73, 2778 (1998).Google Scholar
8. Tran, C.A., Stall, R., J. Crystal Growth 195, 397 (1998).Google Scholar
9. Pophristic, M., Tran, C.A., Appl. Phys. Lett. 73, 815 (1998).Google Scholar
10. Pophristic, M., Tran, C.A., J. Appl. Phys. 86, 1114 (1999)Google Scholar
11. Koukitu, A., Seki, H., J. Crystal Growth (189–190), 13 (1998).Google Scholar
12. Sugawara, Mitsuru, Phys. Rev. B 51, 10743 (1995).Google Scholar