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A Comparison of (100) Hg1−x Cdx Te and Hg1−x ZnxTe Grown By Molecular Beam Epitaxy

Published online by Cambridge University Press:  26 February 2011

R. D. Feldman ,
R. F. Austin  and
P. M. Bridenbaugh
R. D. Feldman
Affiliation:
AT & T Bell Laboratories, Holmdel, N.J. 07733
R. F. Austin
Affiliation:
AT & T Bell Laboratories, Holmdel, N.J. 07733
P. M. Bridenbaugh
Affiliation:
AT & T Bell Laboratories, Holmdel, N.J. 07733
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Abstract

Films of HgCdTe with x < 0.6 and of HgZnTe with x < 0.26 have been grown by molecular beam epitaxy (MBE). Very high electron mobilities have been achieved for both materials in the small bandgap region. Hall mobilities at 77K reach 4.8 × 105 cm2 /V-s for Hg0 87 Zn0.13 Te, and 3.1 × 105 cm2/V-s for Hg0.87 Zn0.13 Te. HgCdTe growth was easily extended to the 1.5 – 3 μm wave length range. Attempts to extend HgZnTe to these bandgaps were unsuccessful due to defects that are induced by surface roughness in high Zn-content films. These results suggest that HgCdTe is the more suitable material for MBE growth for near infrared applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 85
Copyright
Copyright © Materials Research Society 1988

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References

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